BCV26TA datasheet, PDF - EEWORLD Datasheet

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BCV26TA: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size48KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BCV26TA Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BCV26TA Parametric

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	30 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	4000
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	1 V
Base Number Matches	1

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BCV26TA Related Products

	BCV26TA	UBCV46TC	UBCV46TA	UBCV26	BCV26TC
Description	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
package instruction	SMALL OUTLINE, R-PDSO-G3	SOT-23, 3 PIN	SOT-23, 3 PIN	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	not_compliant	not_compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	30 V	60 V	60 V	30 V	30 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	4000	2000	2000	4000	4000
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Maker	Zetex Semiconductors	-	-	Zetex Semiconductors	Zetex Semiconductors
Maximum operating temperature	150 °C	150 °C	150 °C	-	150 °C
VCEsat-Max	1 V	1 V	1 V	-	1 V
Base Number Matches	1	1	1	1	-
Is it Rohs certified?	-	conform to	conform to	conform to	-
JESD-609 code	-	e3	e3	e3	-
Humidity sensitivity level	-	1	1	1	-
Terminal surface	-	MATTE TIN	MATTE TIN	Matte Tin (Sn)	-

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