BCV28 datasheet, PDF - EEWORLD Datasheet

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BCV28: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size16KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BCV28 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN

BCV28 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	30 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	4000
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	1 V
Base Number Matches	1

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SOT89 PNP SILICON

DARLINGTON TRANSISTOR

ISSUE 3 – SEPTEMBER 1995

COMPLEMENTARY TYPE –

PARTMARKING DETAIL –

BCV29

ED

7

BCV28

C

E

C

B

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

-40

-30

-10

-800

-500

1

-65 to +150

UNIT

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

-40

-30

-10

-100

-10

-100

-1

-1.5

4000

10000

20000

4000

200

4.5

MHz

pF

TYP.

MAX.

UNIT

V

nA

µA

nA

V

CONDITIONS.

I

C

=100µA

I

C

=10mA*

I

E

=10µA

V

CB

=-30V

V

CB

=-30V, T

amb

=150°C

V

EB

=-4V

I

C

=-100mA, I

B

=-0.1mA*

I

C

=-100mA, I

B

=-0.1mA*

I

C

=-100µA, V

CE

=-1V†

I

C

=-10mA, V

CE

=-5V*

I

C

=-100mA, V

CE

=-5V*

I

C

=-0.5mA, V

CE

=-5V*

I

C

=-50mA, V

CE

=-5V

f = 20MHz

V

CB

=-10V, f=1MHz

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

V

CE(sat)

V

BE(sat)

Static Forward Current h

FE

Transfer Ratio

Transition Frequency

Output Capacitance

f

T

C

obo

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤2%

† Periodic Sample Test Only.

3 - 23

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