DISCRETE SEMICONDUCTORS
DATA SHEET
BFG198
NPN 8 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 12
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
DESCRIPTION
NPN planar epitaxial transistor in a
plastic SOT223 envelope, intended
for wideband amplifier applications.
The device features a high gain and
excellent output voltage capabilities.
PINNING
PIN
1
2
3
4
base
emitter
collector
DESCRIPTION
emitter
age
BFG198
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
up to T
s
= 135
°C
(note 1)
I
C
= 50 mA; V
CE
= 5 V; T
j
= 25
°C
I
C
= 50 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 50 mA; V
CE
= 8 V; f = 500 MHz;
T
amb
= 25
°C
I
C
= 50 mA; V
CE
= 8 V; f = 800 MHz;
T
amb
= 25
°C
V
o
output voltage
d
im
=
−60
dB; I
C
= 70 mA; V
CE
= 8 V;
R
L
= 75
Ω;
T
amb
= 25
°C;
f
(p+q−r)
= 793.25 MHz
open base
CONDITIONS
open emitter
−
−
−
−
40
−
−
−
−
MIN.
−
−
−
−
90
8
18
15
700
TYP.
MAX.
20
10
100
1
−
−
−
−
−
GHz
dB
dB
mV
UNIT
V
V
mA
W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 135
°C
(note 1)
open emitter
open base
open collector
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
20
10
2.5
100
1
+150
175
UNIT
V
V
V
mA
W
°C
°C
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 50 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 50 mA; V
CE
= 8 V; f = 500 MHz;
T
amb
= 25
°C
I
C
= 50 mA; V
CE
= 8 V; f = 800 MHz;
T
amb
= 25
°C
V
o
d
2
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
output voltage
second order
intermodulation distortion
note 2
note 3
note 4
−
40
−
−
−
−
−
−
−
−
−
MIN.
−
90
1.5
4
0.8
8
18
15
750
700
−55
TYP.
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
up to T
s
= 135
°C
(note 1)
BFG198
VALUE
40
UNIT
K/W
MAX.
100
−
−
−
−
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
mV
mV
dB
s
21 2
=
10 log ------------------------------------------------------------ dB.
(
1
–
s
11 2
) (
1
–
s
22 2
)
2. d
im
=
−60
dB (DIN 45004B); I
C
= 70 mA; V
CE
= 8 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
at d
im
=
−60
dB;
V
q
= V
o
−6
dB; f
p
= 445.25 MHz;
V
r
= V
o
−6
dB; f
q
= 453.25 MHz; f
r
= 455.25 MHz
measured at f
(p+q−r)
= 443.25 MHz.
3. d
im
=
−60
dB (DIN 45004B); I
C
= 70 mA; V
CE
= 8 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
at d
im
=
−60
dB; f
p
= 795.25 MHz;
V
q
= V
o
−6
dB; f
q
= 803.25 MHz;
V
r
= V
o
−6
dB; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz.
4. I
C
= 50 mA; V
CE
= 8 V; V
o
= 50 dBmV;
f
(p+q)
= 810 MHz; f
p
= 250 MHz; f
q
= 560 MHz.
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
handbook, full pagewidth
VBB
C3
C1
input
75
Ω
C2
,
C5
L4
L3
C4
L5
L6
C6
R1
R2
L1
L2
DUT
R3
R4
MBB754
VCC = 8 V
output
75
Ω
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
C2
C1, C4, C6, C7
C3
C5 (note 1)
C8
L1 (note 1)
L2
L3 (note 1)
L4 (note 1)
L5
L6
R1
R2 (note 1)
R3, R4
Note
1. Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (ε
r
= 2.2);
thickness
1
⁄
16
inch; thickness of copper sheet 2 x 35
µm;
see Fig.2.
DESCRIPTION
multilayer ceramic capacitor
multilayer ceramic capacitor
multilayer ceramic capacitor
multilayer ceramic capacitor
multilayer ceramic capacitor
1.5 turns 0.4 mm copper wire
microstripline
0.4 mm copper wire
0.4 mm copper wire
microstripline
Ferroxcube choke
metal film resistor
metal film resistor
metal film resistor
75
≈24
≈3.6
75
5
10
220
30
Ω
nH
nH
Ω
µH
Ω
Ω
Ω
VALUE
1.2
10
10
10
1.5
UNIT
pF
nF
nF
nF
pF
int. dia. 3 mm;
winding pitch 1 mm
length 22 mm;
width 2.5 mm
length 30 mm
length 4 mm
length 19 mm;
width 2.5 mm
3122 108 20153
2322 180 73103
2322 180 73221
2322 180 73309
DIMENSIONS
CATALOGUE NO.
2222 851 12128
2222 590 08627
2222 851 12128
2222 629 08103
2222 851 12158
1995 Sep 12
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
handbook, full pagewidth
C4
VBB
VCC
C6
R1
R3
75
Ω
input
C1
C2
L1
L2
C3
R4
R2
L3
C5
L4
L6
C7
L5
C8
75
Ω
output
MEA968
handbook, full pagewidth
80 mm
60 mm
MEA966
handbook, full pagewidth
80 mm
60 mm
mounting
screws
M 2.5 (8x)
MEA967
Fig.3 Intermodulation distortion and second order intermodulation distortion printed-circuit board.
1995 Sep 12
5
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