BSM50GD60DN2 datasheet, PDF - EEWORLD Datasheet

BSM50GD60DN2: DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES,; CategoryDiscrete semiconductor The transistor; File Size97KB，2 Pages; ManufacturerEUPEC [eupec GmbH]

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BSM50GD60DN2 Overview

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	EUPEC [eupec GmbH]
Reach Compliance Code	unknown
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	600 V
Gate-emitter maximum voltage	20 V
JESD-609 code	e0
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	200 W
Terminal surface	Tin/Lead (Sn/Pb)
VCEsat-Max	2.7 V
Base Number Matches	1

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	BSM50GD60DN2	BSM10GD60DN2	BSM30GD60DN2E3224	BSM30GD60DN2	BSM20GD60DN2E3224	BSM15GD60DN2
Description	Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES,	Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES,	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES,	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES,	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES,	Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	50 A	10 A	30 A	30 A	20 A	15 A
Collector-emitter maximum voltage	600 V	600 V	600 V	600 V	600 V	600 V
Gate-emitter maximum voltage	20 V	20 V	20 V	20 V	20 V	20 V
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1
Maximum operating temperature	150 °C	125 °C	150 °C	150 °C	150 °C	150 °C
Maximum power dissipation(Abs)	200 W	35 W	125 W	125 W	90 W	50 W
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
VCEsat-Max	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Maker	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]	-	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]

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