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BSM30GD60DN2

Description
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES,
CategoryDiscrete semiconductor    The transistor   
File Size97KB,2 Pages
ManufacturerEUPEC [eupec GmbH]
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BSM30GD60DN2 Overview

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES,

BSM30GD60DN2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
Maximum collector current (IC)30 A
Collector-emitter maximum voltage600 V
Gate-emitter maximum voltage20 V
JESD-609 codee0
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)125 W
Terminal surfaceTin/Lead (Sn/Pb)
VCEsat-Max2.7 V
This Material Copyrighted By Its Respective Manufacturer

BSM30GD60DN2 Related Products

BSM30GD60DN2 BSM10GD60DN2 BSM50GD60DN2 BSM30GD60DN2E3224 BSM20GD60DN2E3224 BSM15GD60DN2
Description Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 30 A 10 A 50 A 30 A 20 A 15 A
Collector-emitter maximum voltage 600 V 600 V 600 V 600 V 600 V 600 V
Gate-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V 20 V
JESD-609 code e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1
Maximum operating temperature 150 °C 125 °C 150 °C 150 °C 150 °C 150 °C
Maximum power dissipation(Abs) 125 W 35 W 200 W 125 W 90 W 50 W
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
VCEsat-Max 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
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