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BCW67AR

Description
Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size76KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

BCW67AR Overview

Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BCW67AR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
GuidelineCECC50002-234
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)400 ns
Maximum opening time (tons)100 ns
Base Number Matches1
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 - JUNE 1996
PARTMARKING DETAILS –
BCW67A – DA
BCW67B – DB
BCW67C – DC
BCW68F – DF
BCW68G – DG
BCW68H – DH
COMPLEMENTARY TYPES –
BCW67 – BCW65
BCW68 – BCW66
BCW67AR –
BCW67BR –
BCW67CR –
BCW68FR –
BCW68GR –
BCW68HR –
4W
5W
6W
7T
5T
7N
BCW67
BCW68
C
B
E
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current(10ms)
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CES
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
BCW67
-45
-32
-5
-1000
-800
-100
330
-55 to +150
BCW68
-60
-45
UNIT
V
V
V
mA
mA
mA
mW
°C
3 - 29

BCW67AR Related Products

BCW67AR BCW67CR
Description Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Is it Rohs certified? incompatible incompatible
Maker Zetex Semiconductors Zetex Semiconductors
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A
Collector-emitter maximum voltage 32 V 32 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 75 180
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.225 W 0.225 W
Certification status Not Qualified Not Qualified
Guideline CECC50002-234 CECC50002-234
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
Maximum off time (toff) 400 ns 400 ns
Maximum opening time (tons) 100 ns 100 ns
Base Number Matches 1 1
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