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BAV70WT1

Description
Rectifier Diode, 2 Element, 0.1A, 70V V(RRM), Silicon, SC-70, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size62KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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BAV70WT1 Overview

Rectifier Diode, 2 Element, 0.1A, 70V V(RRM), Silicon, SC-70, 3 PIN

BAV70WT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLRC
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current0.5 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
Dual Switching Diodes
BAV70WT1
3
DEVICE MARKING
BAV70WT1 = A4
1
2
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Symbol
P
D
Max
70
200
500
Max
200
1.6
0.625
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
CASE 419–04, STYLE 5
SOT–323 (SC–70)
ANODE
1
ANODE
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
3
CATHODE
R
θJA
P
D
Alumina Substrate
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
R
θJA
Junction and Storage Temperature
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)
Min
70
Max
Unit
Vdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
µAdc)
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 50 Vdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
=10 mAdc, R
L
= 100Ω, I
R(REC)
= 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns) (Figure 2)
1. FR–5 = 1.0
×
0.75
×
0.062 in.
2. Alumina = 0.4
×
0.3
×
0.024 in. 99.5% alumina.
3.For each individual diode while the seeond diode is unbiased.
I
R1
I
R2
C
D
V
F
5.0
100
1.5
µAdc
nAdc
pF
mVdc
t
rr
V
RF
715
855
1000
1250
6.0
1.75
ns
V
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