The UT54ACS10 and the UT54ACTS10 are triple three-input
NAND gates. The circuits perform the Boolean functions
Y = A⋅B⋅C or Y = A + B + C in positive logic.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
INPUTS
A
H
L
X
X
B
H
X
L
X
C
H
X
X
L
OUTPUT
Y
L
H
H
H
PINOUTS
14-Pin DIP
Top View
A1
B1
A2
B2
C2
Y2
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
C1
Y1
C3
B3
A3
Y3
14-Lead Flatpack
Top View
A1
B1
A2
B2
C2
Y2
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
C1
Y1
C3
B3
A3
Y3
LOGIC DIAGRAM
A1
B1
C1
Y1
LOGIC SYMBOL
A1
B1
C1
A2
B2
C2
A3
B3
C3
(1)
(2)
(13)
(3)
(4)
(5)
(9)
(10)
(11)
(8)
Y3
(6)
Y2
&
(12)
Y1
A2
B2
C2
A3
B3
C3
Y2
Y3
Note:.
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and
IEC Publication 617-12.
1
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
2
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
ΔI
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100μA
I
OH
= -8.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
1.8
10
1.6
mW/
MHz
μA
mA
-8
mA
.7V
DD
V
DD
- 0.25
-200
8
200
.5V
DD
.7V
DD
-1
1
0.40
0.25
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
V
V
OH
V
I
OS
I
OL
mA
mA
3
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
4
AC ELECTRICAL CHARACTERISTICS
2
(V
DD
= 5.0V
±
10%; V
SS
= 0V
1
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
Could you please help me check if what I wrote is correct? Why does it feel like it is not written in? void SPI_send(unsigned char dat) { unsigned short i=0; for(i=0;i0;i--) { SPI_send(opcode.byte[i-1...
For those who have been working for more than one year, your learning of MCU is directly for the boss to increase your salary, but the premise is that you have absolute confidence that you can improve...
I know that global variables and static local variables are usually stored in the .DATA section. However, local variables do not exist in the PE file and cannot be found in the PE file (for example, i...
Send command string to 430 through PC and realize baud rate 115200 through receive interrupt. However, after each receive interrupt, the last byte of the last string is received. Solution: Attached co...
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 19:51[/i] [size=14px] At the 2014 International Consumer Electronics Show (CES) and the World Mobile Communications Conference (WMC), vari...
[align=left][color=rgb(0, 0, 0)][font=宋体][backcolor=white][size=16px]In many applications, the amplifier is required to have a higher amplification factor and suitable input resistance and output resi...
On August 24th, Tesla CEO Elon
Musk
revealed information about the upcoming FSD V14, claiming it will outperform human drivers. Tesla FSD lead Ashok stated last year that FSD version 12.5, ...[Details]
Dual-mode inverters can operate both in conjunction with the grid and independently. These inverters can inject excess energy from renewable energy and storage devices into the grid, and withdraw p...[Details]
To understand why car engines need gearboxes, we must first understand the characteristics of different types of engines. An engine refers to a machine that can convert a form of energy into kineti...[Details]
With the rapid development of technology, automotive intelligence is increasing at an unprecedented rate. This not only enhances vehicle functionality and comfort, but also places higher deman...[Details]
Long ago, the lifespan of cars in my country was 15 years. Once a car reached 15 years old, it was forced to be scrapped. However, the policy was later changed. As long as the car does not exceed 6...[Details]
Is pure electric vehicles a false proposition for long-distance driving? At least from my personal perspective, based on current technological and infrastructure standards, I believe so. Below, I'l...[Details]
Topics: Bring Your Own Device (BYOD) trends; the impact of using employees' own mobile devices to control access to work facilities and equipment on information security; and ways to securely imple...[Details]
summary
There are multiple approaches to making industrial systems more intelligent, including applying artificial intelligence (AI) technology at the edge and in the cloud to sensor...[Details]
Core point: The automotive industry chain and the humanoid robot industry have collaborative advantages in hardware, software, and scenarios. Upstream and downstream companies in the automotive ind...[Details]
introduction
The concept of the smart home is gradually developing and gaining market acceptance. We believe its ultimate form lies in the interconnection of all home appliances through open i...[Details]
Pure electric vehicles, structurally speaking, have components such as a power battery. In addition to the power battery, a small battery also powers some low-voltage electrical components and even...[Details]
With the advent of the electric car era, the number of pure electric vehicles has increased significantly, but many car owners do not know how to properly maintain pure electric vehicles. In additi...[Details]
1. Ease of Use: The HMI module should be designed to be simple and clear, allowing users to easily operate and configure the energy storage device.
2. Ease of Maintenance: The HMI module should...[Details]
With the continuous development of the industrial automation industry, we are seeing an increasing number of intelligent devices using flexible, efficient, and precise robotic arms to p...[Details]
On August 22, according to CNBC's report today, the National Highway Traffic Safety Administration (NHTSA) is launching an investigation into Tesla, and the latter is questioned whether it has fail...[Details]
MCU
京公网安备 11010802033920号
EEWORLD
