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511000A11M/BUAJC

Description
Fast Page DRAM, 1MX1, 110ns, CMOS, CDSO20
Categorystorage    storage   
File Size1MB,15 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

511000A11M/BUAJC Overview

Fast Page DRAM, 1MX1, 110ns, CMOS, CDSO20

511000A11M/BUAJC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
Reach Compliance Codeunknown
Maximum access time110 ns
I/O typeSEPARATE
JESD-30 codeR-XDSO-N20
JESD-609 codee0
memory density1048576 bit
Memory IC TypeFAST PAGE DRAM
memory width1
Number of terminals20
word count1048576 words
character code1000000
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize1MX1
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeSON
Encapsulate equivalent codeSOLCC20/26,.35
Package shapeRECTANGULAR
Package formSMALL OUTLINE
power supply5 V
Certification statusNot Qualified
refresh cycle512
Filter level38535Q/M;38534H;883B
Maximum standby current0.002 A
Maximum slew rate0.07 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1

511000A11M/BUAJC Related Products

511000A11M/BUAJC 511000A11/BVAJC 511000A12/BVAJC
Description Fast Page DRAM, 1MX1, 110ns, CMOS, CDSO20 Fast Page DRAM, 1MX1, 110ns, CMOS, CDIP18 Fast Page DRAM, 1MX1, 120ns, CMOS, CDIP18
Is it Rohs certified? incompatible incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknown unknown unknown
Maximum access time 110 ns 110 ns 120 ns
I/O type SEPARATE SEPARATE SEPARATE
JESD-30 code R-XDSO-N20 R-XDIP-T18 R-XDIP-T18
JESD-609 code e0 e0 e0
memory density 1048576 bit 1048576 bit 1048576 bit
Memory IC Type FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
memory width 1 1 1
Number of terminals 20 18 18
word count 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
organize 1MX1 1MX1 1MX1
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material CERAMIC CERAMIC CERAMIC
encapsulated code SON DIP DIP
Encapsulate equivalent code SOLCC20/26,.35 DIP18,.3 DIP18,.3
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE
power supply 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 512 512 512
Filter level 38535Q/M;38534H;883B 38535Q/M;38534H;883B 38535Q/M;38534H;883B
Maximum standby current 0.002 A 0.002 A 0.002 A
Maximum slew rate 0.07 mA 0.07 mA 0.06 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount YES NO NO
technology CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form NO LEAD THROUGH-HOLE THROUGH-HOLE
Terminal pitch 1.27 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL
Base Number Matches 1 1 1
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Index Files: 2132  1984  2663  2735  8  43  40  54  56  1 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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