- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory
q
V
DD
: 5.0 volts
+
10%
q
Standard Microcircuit Drawing 5962-96891
PRODUCT DESCRIPTION
The UT28F256 amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened,
32K x 8 programmable memory device. The UT28F256 PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the UT28F256.
The combination of radiation-hardness, fast access time, and low
power consumption make the UT28F256 ideal for high speed
systems designed for operation in radiation environments.
A(14:0)
DECODER
MEMORY
ARRAY
SENSE AMPLIFIER
CE
PE
OE
PROGRAMMING
CONTROL
LOGIC
DQ(7:0)
Figure 1. PROM Block Diagram
1
DEVICE OPERATION
The UT28F256 has three control inputs: Chip Enable (CE),
Program Enable (PE), and Output Enable (OE); fifteen address
inputs, A(14:0); and eight bidirectional data lines, DQ(7:0). CE
is the device enable input that controls chip selection, active, and
standby modes. AssertingCE causes I
DD
to rise to its active value
and decodes the fifteen address inputs to select one of 32,768
words in the memory. PE controls program and read operations.
During a read cycle, OE must be asserted to enable the outputs.
PIN CONFIGURATION
PIN NAMES
A(14:0)
CE
OE
PE
DQ(7:0)
Address
Chip Enable
Output Enable
Program Enable
Data Input/Data Output
Table 1. Device Operation Truth Table
1
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
DD
PE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
OE
X
0
1
1
PE
1
1
0
1
CE
1
0
0
0
I/O MODE
Three-state
Data Out
Data In
Three-state
MODE
Standby
Read
Program
Read
2
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
V
DD
V
I/O
T
STG
P
D
T
J
Θ
JC
I
I
PARAMETER
DC supply voltage
Voltage on any pin
Storage temperature
Maximum power dissipation
Maximum junction temperature
Thermal resistance, junction-to-case
2
DC input current
LIMITS
-0.3 to 7.0
-0.5 to (V
DD
+ 0.5)
-65 to +150
1.5
+175
3.3
UNITS
V
V
°C
W
°C
°C/W
mA
±
10
Notes:
1 . Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2 . Test per MIL-STD-883, Method 1012, infinite heat sink.
2
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
T
C
V
IN
PARAMETER
Positive supply voltage
Case temperature range
DC input voltage
LIMITS
4.5 to 5.5
-55 to +125
0 to V
DD
UNITS
V
°C
V
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD
= 5.0V
±
10%; -55°C < T
C
< +125°C)
SYMBOL
V
IH
V
IL
V
OL1
V
OL2
V
OH1
V
OH2
C
IN 1
C
IO 1, 4
I
IN
I
OZ
PARAMETER
High-level input voltage
Low-level input voltage
Low-level output voltage
Low-level output voltage
High-level output voltage
High-level output voltage
Input capacitance
(TTL)
(TTL)
I
OL
= 4.0mA, V
DD
= 4.5V (TTL)
I
OL
= 200µA, V
DD
= 4.5V (CMOS)
I
OH
= -200µA, V
DD
= 4.5V (CMOS)
I
OH
= -2.0mA, V
DD
= 4.5V (TTL)
ƒ
= 1MHz, V
DD
= 5.0V
V
IN
= 0V
ƒ
= 1MHz, V
DD
= 5.0V
V
OUT
= 0V
Input leakage current
Three-state output leakage
current
V
IN
= 0V to V
DD
V
O
= 0V to V
DD
V
DD
= 5.5V
OE = 5.5V
V
DD
= 5.5V, V
O
= V
DD
V
DD
= 5.5V, V
O
= 0V
TTL inputs levels (I
OUT
= 0), V
IL
=
0.2V
V
DD
, PE = 5.5V
CMOS input levels V
IL
= V
SS
+0.25V
CE = V
DD
- 0.25 V
IH
= V
DD
- 0.25V
-5
-10
5
10
µA
µA
V
DD
-0.1
2.4
15
CONDITION
MINIMUM
2.4
0.8
0.4
V
SS
+ 0.10
MAXIMUM
UNIT
V
V
V
V
V
V
pF
Bidirectional I/O capacitance
15
pF
I
OS 2,3
I
DD1
(OP)
5
Short-circuit output current
90
-90
mA
mA
Supply current operating
@25.0MHz (40ns product)
@22.2MHz (45ns product)
Supply current standby
125
117
2
mA
mA
mA
I
DD2
(SB)
post-rad
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rad(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 3.0mA/MHz.
3
READ CYCLE
A combination of PE greater than V
IH
(min), and CE less than
V
IL
(max) defines a read cycle. Read access time is measured
from the latter of device enable, output enable, or valid address
to valid data output.
An address access read is initiated by a change in address inputs
while the chip is enabled with OE asserted and PE deasserted.
Valid data appears on data output, DQ(7:0), after the specified
t
AVQV
is satisfied. Outputs remain active throughout the entire
cycle. As long as device enable and output enable are active, the
address inputs may change at a rate equal to the minimum read
cycle time.
AC CHARACTERISTICS READ CYCLE (Post-Radiation)*
(V
DD
= 5.0V
±
10%; -55°C < T
C
< +125°C)
SYMBOL
t
AVAV 1
t
AVQV
t
AXQX 2
t
GLQX 2
t
GLQV
t
GHQZ
t
ELQX2
t
ELQV
t
EHQZ
PARAMETER
Read cycle time
Read access time
Output hold time
OE-controlled output enable time
OE-controlled access time
OE-controlled output three-state time
CE-controlled output enable time
CE-controlled access time
CE-controlled output three-state time
The chip enable-controlled access is initiated by CE going active
while OE remains asserted, PE remains deasserted, and the
addresses remain stable for the entire cycle. After the specified
t
ELQV
is satisfied, the eight-bit word addressed by A(14:0)
appears at the data outputs DQ(7:0).
Output enable-controlled access is initiated by OE going active
while CE is asserted, PE is deasserted, and the addresses are
stable. Read access time is t
GLQV
unless t
AVQV
or t
ELQV
have
not been satisfied.
28F256-45
MIN
MAX
45
45
0
0
15
15
0
45
15
28F256-40
MIN
MAX
40
40
0
0
15
15
0
40
15
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
* Post-radiation performance guaranteed at 25
°C
per MIL-STD-883 Method 1019 at 1E6 rads(Si).
1. Functional test.
2. Three-state is defined as a 400mV change from steady-state output voltage.
4
t
AVAV
A(14:0)
CE
t
ELQX
t
ELQV
OE
t
GLQV
DQ(7:0)
t
GLQX
t
AVQV
t
AXQX
t
GHQZ
t
AVQV
t
EHQZ
Figure 2. PROM Read Cycle
RADIATION HARDNESS
The UT28F256 PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
I use the following code to make a pop-up menu under EVC: CPoint point; point.x=50; point.y=100; CMenu menu; menu->LoadMenu(IDR_MENU1); CMenu *pPopMenu = menu->GetSubMenu( 0); pPopMenu->TrackPopupMenu...
What does it mean when the port latch is set to 1? How should I understand this sentence? It would be better if there is a picture to illustrate it....
I imitated the seed EVM642 and used tps54310 as the power supply of 642. When it is unloaded, the power supply output is normal 1.39v and 3.26v. But when the load is connected, the 1.39v output is nor...
[Routine Introduction]: Use the MC430F14 development board to implement the ADC12 module for data acquisition, and then display the measured values on the LCD12232 module after conversion. During the ...
On August 24th, Tesla CEO Elon
Musk
revealed information about the upcoming FSD V14, claiming it will outperform human drivers. Tesla FSD lead Ashok stated last year that FSD version 12.5, ...[Details]
Dual-mode inverters can operate both in conjunction with the grid and independently. These inverters can inject excess energy from renewable energy and storage devices into the grid, and withdraw p...[Details]
A parallel inverter consists of two thyristors (T1 and T2), a capacitor, a center-tapped transformer, and an inductor. The thyristors provide a current path, while the inductor L maintains a consta...[Details]
As more and more consumers purchase new energy vehicles, the safety of electric vehicles has become a major concern. This has been particularly prominent following a series of electric vehicle fire...[Details]
"Have you set your calendar reminder?"
On August 24, Nvidia Robotics' official account posted a photo of a black gift box on a social media platform, with an attached greeting card sig...[Details]
In recent years, many people have switched to new energy vehicles, and this type of vehicle has indeed been highly sought after and is considered the future direction of automobile development, and...[Details]
In recent years, with the application of the IEC61850 standard and the development and deployment of optoelectronic transformers, the concept of digital substations has been put into practical use ...[Details]
summary
There are multiple approaches to making industrial systems more intelligent, including applying artificial intelligence (AI) technology at the edge and in the cloud to sensor...[Details]
1. Introduction
Electronic scales are gradually replacing traditional measuring tools like springs and balances in everyday life, such as electronic price computing scales and electronic weigh...[Details]
According to foreign media reports, secondary battery materials company POSCO Future M announced that it has successfully developed two experimental (prototype) positive electrode materials for the...[Details]
On August 22, Lantu Motors officially launched its Lanhai Intelligent Hybrid technology via an online livestream. This intelligent hybrid technology, which integrates a full-range 800V high-voltage...[Details]
Common Mode Semiconductor has officially released its latest generation of power management ICs—the GM6506 series. This fully integrated high-frequency synchronous rectification step-down p...[Details]
This paper proposes a temperature real-time transmission and display solution based on LED optical data transmission, with Jingwei Yager low-power FPGA HR (Yellow River) series as the main controll...[Details]
With the rapid development of electric vehicles in my country, people are beginning to pay attention to the issue of radiation from electric vehicles. We all know that mobile phones emit radiation,...[Details]
1. Ease of Use: The HMI module should be designed to be simple and clear, allowing users to easily operate and configure the energy storage device.
2. Ease of Maintenance: The HMI module should...[Details]
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
