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MTD3055ET4

Description
Power Field-Effect Transistor, 8A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size385KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MTD3055ET4 Overview

Power Field-Effect Transistor, 8A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3

MTD3055ET4 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeCASE 369A-13
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)8 A
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.15 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

MTD3055ET4 Related Products

MTD3055ET4
Description Power Field-Effect Transistor, 8A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3
Is it Rohs certified? incompatible
Maker Motorola ( NXP )
package instruction SMALL OUTLINE, R-PSSO-G2
Contacts 3
Manufacturer packaging code CASE 369A-13
Reach Compliance Code unknown
ECCN code EAR99
Shell connection DRAIN
Configuration SINGLE
Minimum drain-source breakdown voltage 60 V
Maximum drain current (Abs) (ID) 8 A
Maximum drain current (ID) 8 A
Maximum drain-source on-resistance 0.15 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2
JESD-609 code e0
Number of components 1
Number of terminals 2
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 20 W
Certification status Not Qualified
surface mount YES
Terminal surface Tin/Lead (Sn/Pb)
Terminal form GULL WING
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
Transistor component materials SILICON
Base Number Matches 1
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