Collector to Base Voltage .......................................................................................................................... -50 V
V
CEO
Collector to Emitter Voltage....................................................................................................................... -50 V
V
EBO
Emitter to Base Voltage ............................................................................................................................... -5 V
I
C
Collector Current ...................................................................................................................................... -150 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
-50
-50
-5
-
-
-
-
120
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-300
-1.1
700
-
-
7
MHz
pF
Unit
V
V
V
nA
nA
mV
V
I
C
=-100uA
I
C
=-1mA
I
E
=-10uA
V
CB
=-50V
V
EB
=-5V
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-2mA
V
CE
=-6V, I
C
=-150mA
V
CE
=-10V, I
C
=-1mA, f=100MHz
V
CB
=-10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE1
Rank
Range
A4Y
120-240
A4G
200-400
A4B
350-700
HMBT1015
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
o
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2004.08.10
Page No. : 2/4
Saturation Voltage & Collector Current
1000
125 C
75 C
o
V
CE(sat)
@ I
C
=10I
B
25 C
o
Saturation Voltage (mV)
75 C
100
125 C
25 C
o
o
o
hFE
100
hFE @ V
CE
=6V
10
0.1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
V
BE(sat)
@ I
C
=10I
B
10.00
Capacitance & Reverse-Biased Voltage
Saturation Voltage (mV)
75 C
1000
25 C
o
o
Capacitance (pF)
Cob
125 C
o
100
0.1
1
10
100
1000
1.00
0.1
1
10
100
Collector Current-I
C
(mA)
Reverse-Biased Voltage (V)
Cutoff Frequency & Collector Current
1000
1
Safe Operating Area
PT=1ms
Cutoff Frequency (MHz)
..
.
V
CE
=10
100
Collector Current-I
C
(mA)
PT=1s
0.1
PT=100ms
10
1
1
10
100
1000
0.01
1
10
100
Collector Current (mA)
Forward-Biased Voltage-V
CE
(V)
HMBT1015
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A
L
Rank Code
(Y,G,B)
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2004.08.10
Page No. : 3/4
A 4
3
Pb Free Mark
B S
1
2
Pb-Free: " "
(Note)
Normal: None
V
G
Note: Pb-free product can distinguish by the green
label or the extra description on the right side
of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
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