Transmission
Laser
Modules
KeyFeatures
InGaAsP monolithically integrated
DFB laser and modulator in-house
chip
Low drive voltage (<= 2 Vpp)
Very low dispersion penalty up to
750 km for 2.7 Gbit/s operation (up
to 12800 ps/nm)
Based on XMD MSA package
product platform (size & pinout)
Leads for electrical connections
High output power [0;+4] dBm
configuration
Wavelength selection according to
ITU-T G.692
RoHs Compliant
1926 LMM
TOSA – 2.5 Gb/s Electro-Absorption Laser
Module WDM – 12800 and 7200 ps/nm
application – Pigtail
This 1926 LMM contains a 3SPGroup DFB laser with monolithically integrated
electro-absorption modulator.
The modulation voltage is applied to the modulator section while the DFB laser
operates CW. Without the complexity of LiNbO3 external modulators, the 1926
LMM is dedicated to STM16 / OC-48 bit rate with reduced size and cost. This
device allows 2.5Gbit/s data transmission with an extinction ratio higher than
10.5dB and less than 2V modulation voltage.
The 1926 LMM is optimized for up to 2.7Gbit/s WDM transmission systems
supporting dispersion up to 12800ps/nm.
Applications
Regional Metro D-WDM line card
size and cost optimization
STM-16 and OC-48 size optimized
Transmitter and Transceiver
modules
Replacement of 14 pin-butterfly
EML module
For moreInfo
Please contact us at:
North America:
514.748.4848
888.922.1044
Europe & Asia:
+33 (0) 1 69 80 58 33
or via e-mail at
sales@3spgroup.com
OPTICAL
CHARACTERISTICS
1926 LMM
TOSA – 2.5 Gb/s
Electro-Absorption Laser Module
WDM – 12800 and 7200 ps/nm
application – Pigtail
Parameters
Operating case temperature
Laser Threshold current
Laser operating current
Symb
Tc
Ith
Iop
Test conditions
VBM= 0V
VBM= 0V (BOL)
3CN01304##,
3CN01305##,
3CN01306##
VBM= 0V (BOL)
3CN01307##
Note 1
3CN01304##,
Twave, Iop, DER , λ
c
, notes 1 & 2
3CN01305##,
Twave, Iop, DER , λ
c
, notes 1 & 3
3CN01306##,
Twave, Iop, DER , λ
c
, notes 1 & 3
3CN01307##,
Twave, Iop, DER , λ
c
, notes 1 & 3
Twave, ITU grid
Iop , Note 1, 2, 3
DER, Note 1, 2, 3
Note 1
Iop , V= -5V
V= -5V
VBM= -1V @7200ps/nm
VBM= -2V @12800ps/nm
∆ T=45°C, 1.2*Iop
@VBM= -1V, ∆ T= 45°C, 1.2*Iop
P
AVG
, VBM op, Iop (EOL)= 1.2*Iop
∆ T=45°C
VBM=-2V
Ts=25°C
Ts=25°C
Min
0
5
60
Max
+70
35
85
Units
°C
mA
mA
2
80
25
-2
-4
-2
-4
0
1529.55
10.5
35
20
100
35
0
2
+1
+1
-1
+4
1569.55
2
1500
0.1
1
2
1.6
°C
V
Vpp
dBm
Laser chip temperature range for tunability
Modulator bias voltage
Modulator drive voltage
Average optical output power
Twave
VBM
Vpp
P
AVG
Center wavelength range
Dynamic Extinction Ratio
Dispersion Penalty
Side Mode Suppression Ratio
Monitor Diode Current
Dark Current
TEC current
TEC voltage
TEC power
Total power
Thermistor Resistance
Thermistor β Coe cient
Note 1 : BER= 10-10, 2488Gb/s, modulation, 231-1 PRBS, NRZ
line code
Note 2 : 7200 ps/nm minimum dispersion assuming ber with
an average dispersion of 17ps/nm/km @ 1550nm
Note 3 : 12800 ps/nm minimum dispersion assuming ber
with an average dispersion of 17ps/nm/km @ 1550nm
λ
c
DER
∆S
SMSR
I
m
I
d
Itec
Vtec
Wp
Wtot
R
TH
β
nm
dB
dB
dB
A
A
A
V
W
W
K
K
Unit
°C
mA
V
A
V
mA
V
A
mA
V
V
A
s
9.5
3800
Min
-40
1.8
10.5
4000
Max
+85
150
2
10
1
100
5
10
1
20
2.6
1.4
10
Absolute Maximum
Ratings
Exposure to absolute maximum rating conditions for
extended periods may a ect device reliability.
Parameters
Storage case temperature
Laser Forward Current
Laser Reverse Voltage
Laser Reverse Current
Modulator Forward Voltage
Modulator Forward Current
Modulator Reverse Voltage
Modulator Reverse Current
Photodiode Forward Current
Photodiode Reverse Voltage
TEC Voltage
TEC Current
Lead Soldering Temperature (at 260°C)
1926 LMM
TOSA – 2.5 Gb/s
Electro-Absorption Laser Module
WDM – 12800 and 7200 ps/nm
application – Pigtail
3
Mechanical
Details
Pin
Out
N°
1
2
3
4
5
6
7
8
Description
TE Cooler Cathode
TE Cooler Anode
Floating signal ground
Modulator Anode (bias-)
Floating signal ground
PD Anode (bias -)
LD Anode (bias -)
Thermistor
1926 LMM
TOSA – 2.5 Gb/s
Electro-Absorption Laser Module
WDM – 12800 and 7200 ps/nm
application – Pigtail
4
Shipment
packing
Each device is individually
packed in an anti-static
container and in such a
manner as to prevent damage
in transit.
The packing shall include the
following information:
3S Photonics logo
Product family name : 1926
LMM
Product code : 3CN number
(see Ordering information
section)
Serial number
Hazard warning label (ESD)
Laser Safety Class Label
Deliverable
data
The following data shall be supplied with each device:
L(I) / V(I) / Im(I) curves
Values for Vmod, Von (On-state voltage [0 data]), Vbias (bias voltage), DER, S0
(received optical power without ber), DS and Pave for If
DER and dispersion penalty (DS)
Plot of SER vs Vmod over the range 0 V to –3 V @ If , Twave and Tc= 25 °C
Handling
This product is sensitive to electrostatic discharge and should not be handled
except at a static free workstation.
Take precautions to prevent ESD; use wrist straps, grounded work surfaces
and recognized anti-static techniques when handling the product.
Handle the laser module by its package only, never hold it by its pigtail.
Care should be taken to avoid supply transient and over voltage. Over voltage
above the maximum speci ed in absolute maximum rating section may cause
permanent damage to the device.
Laser Safety
Information
Take appropriate precautions to
prevent undue exposure to naked
eye. This product is classi ed
Class 1M Laser Product according
to IEC-60825-1: edition2.
All versions are Class IIIB laser
products per 21 CFR 1040-10
Laser. Safety requirements under
accession number 0120546-00.
ATTENTION
OBSERVE
PRECAUTIONS FOR
HANDLING
ELECTROSTATIC
DISCHARGE
SENSITIVE DEVICES
DANGER
LASER RADIATION - AVOID
DIRECT EXPOSURE TO BEAM
LESS THAN 40 mW 1550 nm
CLASS IIIb LASER PRODUCT
京公网安备 11010802033920号
EEWORLD
