6MBI75S-120
IGBT MODULE ( S series)
1200V / 75A 6 in one-package
Features
· Compact package
· P.C.board mount
· Low V
CE
(sat)
IGBT Modules
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous Tc=25°C
current
Tc=80°C
1ms
Tc=25°C
Tc=80°C
1ms
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage
Screw torque
Symbol
V
CES
V
GES
I
C
I
C
pulse
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
is
Mounting *
1
Rating
1200
±20
100
75
200
150
75
150
520
Unit
V
V
A
A
A
A
W
Equivalent Circuit Schematic
21(P)
13(P)
1(Gu)
5(Gv)
9(Gw)
2(Eu)
19(U)
6(Ev)
17(V)
10(Ew)
15(W)
3(Gx)
7(Gy)
11(Gz)
°C
+150
°C
-40 to +125
AC 2500 (1min.) V
N·m
3.5
4(Ex)
20(N)
8(Ey)
12(Ez)
14(N)
*
1 :
Recommendable value : 2.5 to 3.5 N·m (M5)
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
Characteristics
Min.
–
–
5.5
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
7.2
2.3
2.8
9000
1875
1650
0.35
0.25
0.1
0.45
0.08
2.5
2.0
–
Max.
1.0
0.2
8.5
2.6
–
–
–
–
1.2
0.6
–
1.0
0.3
3.3
–
0.35
Conditions
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=75mA
Tj=25°C V
GE
=15V, I
C
=75A
Tj=125°C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=75A
V
GE
=±15V
R
G
=16Ω
Tj=25°C
Tj=125°C
I
F
=75A
I
F
=75A, V
GE
=0V
V
µs
Unit
mA
µA
V
V
pF
µs
Turn-off time
Diode forward on voltage
Reverse recovery time
Thermal resistance characteristics
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
2
Characteristics
Min.
Typ.
–
–
–
–
–
0.05
Conditions
Max.
0.24
0.50
–
IGBT
FWD
the base to cooling fin
°C/W
°C/W
°C/W
Unit
Thermal resistance
*
2
: This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI75S-120
Characteristics
Collector current vs. Collector-Emitter voltage
200
IGBT Modules
Collector current vs. Collector-Emitter voltage
200
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V
150
Collector current : Ic [ A ]
15V
12V
150
Collector current : Ic [ A ]
VGE= 20V
15V
12V
100
10V
100
10V
50
50
8V
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
200
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage
10
Tj= 25 C (typ.)
o
Tj= 25 C
150
Collector current : Ic [ A ]
o
Tj= 125 C
Collector - Emitter voltage : VCE [ V ]
o
8
6
100
4
Ic= 150A
2
Ic= 75A
Ic= 37.5A
50
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 C
20000
1000
o
Dynamic Gate charge (typ.)
Vcc=600V, Ic=75A, Tj= 25 C
25
o
10000
Cies
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
800
20
Gate - Emitter voltage : VGE [ V ]
600
15
1000
Coes
Cres
400
10
200
5
100
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
0
0
200
400
Gate charge : Qg [ nC ]
600
0
800
6MBI75S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V,V
GE=
±15V, Rg=16Ω,Tj=25 C
1000
1000
o
Vcc=600V,V
GE=
±15V, Rg=16Ω,Tj=125
o
C
toff
500
Switching time : ton, tr, toff, tf [ nsec ]
toff
ton
tr
Switching time : ton, tr, toff, tf [ nsec ]
500
ton
tr
tf
100
100
tf
50
0
50
100
150
Collector current : Ic [ A ]
50
0
50
100
150
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=75A,V
GE=
±15V,Tj=25
o
C
5000
20
Vcc=600V,V
GE=
±15V, Rg=16Ω,Tj=125
o
C
ton
toff
Switching time : ton, tr, toff, tf [ nsec ]
tr
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
15
Eon(125 C)
o
1000
Eon(25 C)
10
Eoff(125 C)
o
o
500
Eoff(25 C)
5
Err(125 C)
o
o
100
tf
Err(25 C)
o
50
5
10
50
100
500
Gate resistance : Rg [
Ω
]
0
0
50
100
150
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
Vcc=600V,Ic=75A,V
GE=
±15V ,Tj=125 C
50
Eon
200
o
+V
GE
=15V,-V
GE<
15V, Rg>16Ω,Tj<125
o
C
=
=
=
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
40
150
Collector current : Ic [ A ]
Eoff
10
Err
0
5
10
50
100
500
Gate resistance : Rg [
Ω
]
0
0
200
400
600
800
1000
1200
1400
Collector - Emitter voltage : VCE [ V ]
30
100
20
50
6MBI75S-120
IGBT Modules
Forward current vs. Forward on voltage (typ.)
200
300
Reverse recovery characteristics (typ.)
Vcc=600V,V
GE=
±15V, Rg=16Ω ,Tj=125
o
C
trr(125 C)
Tj=125 C
150
Reverse recovery time : trr [ nsec ]
Reverse recovery current : Irr [ A ]
Forward current : IF [ A ]
100
trr(25 C)
Irr(125 C)
Irr(25 C)
o
o
o
o
o
Tj=25 C
o
100
50
0
0
1
2
Forward on voltage : VF [ V ]
3
4
10
0
50
100
150
Forward current : IF [ A ]
Transient thermal resistance
1
FWD
Thermal resistanse : Rth(j-c) [ C/W ]
IGBT
o
0.1
M626
0.01
0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
Outline Drawings, mm
122
±1
8-R2.25
±0.3
4-ø5.5
±0.3
13.09
19.05
19
110
±0.3
94.5
±0.3
19.05
18
19.05
17
19.05
16 15
11.5
+0.5
0
19.05 11.67
39.9
±0.3
3.81
3.81
+0.5
11.5
0
20
14
57.5
±0.3
50
±0.3
58.42
ø2.5
±0.1
1.5
ø2.1
±0.1
Section A-A
ø0.4
Shows theory dimensions
0.8
±0.2
6
62
±1
99.6
±0.3
3.81
21
1
2
3
4
5
6
7
8
9
11
12
4.06
3.5
±0.5
1.5
±0.3
15
15.24 15.24 15.24 15.24 15.24
118.11
13
A
A
1.15
±0.2
20.5
±1
2.5
±0.3
17
±1
6.5
±0.5
1
±0.2
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