P2N2907AZL1 datasheet, PDF - EEWORLD Datasheet

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P2N2907AZL1: Description600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92; CategoryDiscrete semiconductor The transistor; File Size152KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

P2N2907AZL1 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	EUROPEAN PART NUMBER
Maximum collector current (IC)	0.6 A
Collector-based maximum capacity	8 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power consumption environment	1.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	110 ns
Maximum opening time (tons)	50 ns
VCEsat-Max	1.6 V
Base Number Matches	1

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Description	600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A
Collector-based maximum capacity	8 pF	8 pF	8 pF	8 pF	8 pF	8 pF	8 pF	8 pF	8 pF
Collector-emitter maximum voltage	60 V	60 V	60 V	60 V	60 V	60 V	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	100	100	100	100	100	100	100
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-W3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power consumption environment	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	WIRE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Maximum off time (toff)	110 ns	110 ns	110 ns	110 ns	110 ns	110 ns	110 ns	110 ns	110 ns
Maximum opening time (tons)	50 ns	50 ns	50 ns	50 ns	50 ns	50 ns	50 ns	50 ns	50 ns
VCEsat-Max	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V
Maker	Motorola ( NXP )	-	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )

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