IC 4K X 1 FAST PAGE DRAM, 200 ns, CDIP24, DIP-24, Dynamic RAM
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | NXP |
| Parts packaging code | DIP |
| package instruction | DIP, DIP22,.4 |
| Contacts | 24 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 200 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-GDIP-T24 |
| JESD-609 code | e0 |
| memory density | 4096 bit |
| Memory IC Type | FAST PAGE DRAM |
| memory width | 1 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 24 |
| word count | 4096 words |
| character code | 4000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 4KX1 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP22,.4 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Certification status | Not Qualified |
| refresh cycle | 64 |
| Maximum supply voltage (Vsup) | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | NMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| 2680F | 2680-2F | 2680-1F | |
|---|---|---|---|
| Description | IC 4K X 1 FAST PAGE DRAM, 200 ns, CDIP24, DIP-24, Dynamic RAM | IC 4K X 1 FAST PAGE DRAM, 350 ns, CDIP24, DIP-24, Dynamic RAM | IC 4K X 1 FAST PAGE DRAM, 270 ns, CDIP24, DIP-24, Dynamic RAM |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | NXP | NXP | NXP |
| Parts packaging code | DIP | DIP | DIP |
| package instruction | DIP, DIP22,.4 | DIP, DIP22,.4 | DIP, DIP22,.4 |
| Contacts | 24 | 24 | 24 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum access time | 200 ns | 350 ns | 270 ns |
| I/O type | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 code | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 |
| JESD-609 code | e0 | e0 | e0 |
| memory density | 4096 bit | 4096 bit | 4096 bit |
| Memory IC Type | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
| memory width | 1 | 1 | 1 |
| Number of functions | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 |
| Number of terminals | 24 | 24 | 24 |
| word count | 4096 words | 4096 words | 4096 words |
| character code | 4000 | 4000 | 4000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C |
| organize | 4KX1 | 4KX1 | 4KX1 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP22,.4 | DIP22,.4 | DIP22,.4 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 64 | 64 | 64 |
| Maximum supply voltage (Vsup) | 5.25 V | 5.25 V | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V | 4.75 V | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO |
| technology | NMOS | NMOS | NMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL |
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