61048
SILICON PHOTOTRANSISTOR
(TYPE GS4123)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
•
•
•
•
•
Hermetically sealed
High Sensitivity
Base lead provided for conventional transistor
biasing
Wide receiving angle for easy alignment
Spectrally Matched to the 62030 Series LED.
Applications:
•
•
•
•
Incremental Encoding
Reflective Sensors
Position Sensors
Level Sensors
DESCRIPTION
This is a N-P-N Planar Silicon phototransistor in a flat window TO-46 three-lead package featuring a large (0.06” X 0.06”)
sensitive area. It is available in a range of sensitivities and is ideal for use wherever system considerations dictate the use
of external optics to focus radiation on the sensor. Available custom binned to customer specifications and/or screened to
MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Temperature (See part selection guide for actual operating temperature)...................................... -65°C to +125°C
Collector-Emitter Voltage........................................................................................................................................................ 50V
Emitter-Collector Voltage.......................................................................................................................................................... 7V
Continuous Collector Current ..............................................................................................................................................50mA
Power Dissipation (Derate at the rate of 2.5 mW/°C above 25°C) ..................................................................................250mW
Lead Soldering Temperature (1/16” from case for 10 seconds)........................................................................................ 240°C
Package Dimensions
Schematic Diagram
0.210 [5.33]
0.170 [4.32]
0.030 [0.76] MAX
0.019 Ø
[0.48]
0.016 Ø[0.41]
0.230Ø [5.84]
0.209Ø [5.31]
C
3 LEADS
3
COLLECTOR
Ø0.100 [Ø2.54]
0.048 [1.22]
0.028 [0.71]
0.046 [1.17]
0.036 [0.91]
45°
0.195Ø [4.95]
0.178Ø [4.52]
0.500 [12.70]
MIN
BASE
EMITTER
2
1
E
B
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
THE COLLECTOR IS IN ELECTRICAL
CONTACT WITH THE CASE
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
6-4
61048
Light Current
I
L
5
20
30
50
30
7
8
10
15
20
0.2
SILICON PHOTOTRANSISTOR (GS4123)
UNITS
mA
ELECTRICAL CHARACTERISTICS
T
A
= 25°C unless otherwise specified.
PARAMETER
SYMBOL
MIN
TYP
MAX
20
30
50
--
50
TEST CONDITIONS
V
CE
= 5.0V, H = 20 mW/cm
2
NOTE
1
Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Light Current Rise Time
I
D
BV
CEO
BV
ECO
nA
V
V
µ
s
V
CE
= 5V, H = 0
I
C
= 100
µ
A
I
E
= 100
µ
A
R
L
= 100
Ω
, V
CC
= 5V, I
L
= 1.0mA
t
r
Saturation Voltage
V
CE (sat)
V
degrees
I
C
= 0.4mA, H = 20 mW/cm
2
2
θ
Angular Response
10
NOTES:
1.
Irradiance in mW/cm
2
from tungsten source at a color temperature of 2870K.
2.
The angle between incidence for peak response and incidence for 50% of peak response.
RELATIVE SPECTRAL RESPONSE
100
RELATIVE RE SPONSE [% ]
100
ANGULAR RESPONSE
80
90
RELATIVE RESPONSE [%]
Vcc
PULSE RESPONSE TEST
CIRCUIT AND WAVEFORM
90%
80
70
60
50
40
30
20
10
60
H
BASE
OPEN
DUT
40
10%
IL
RL
OUTPUT
tr
tf
20
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
-50
-40
-30
-20
-10
0
10
20
30
40
50
WAVELENGTH [um]
ANGLE [DEGREES]
DARK CURRENT versus TEMPERATURE
10
COLLECTOR EMITTER CHARACTERISTICS
10
SOURCE TEMP - 2870
TUNGSTEN SOURCE
TA = 25°C
CEO. COLLECTOR DARK CURRENT [uA]
1.0
VCC =30 V
M=0
IC COLLECTOR CURRENT [mA]
0 mW
H=1
8.0
0.1
6.0
0.01
4.0
H = 50
0.001
I
0.0001
2.0
H = 20
H = 10
0
0.00001
-50
-25
0
25
50
75
100
125
0
5
10
15
20
25
30
35
T
A
- AMBIENT TEMPERATURE - °C
VCE COLLECTOR-EMITTER VOLTAGE [VOLTS]
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
Bias Voltage-Collector/Emitter
Irradiance (H)
SYMBOL
I
F
H
MIN
5
15
MAX
10
25
UNITS
mA
mW/cm
2
SELECTION GUIDE
PART NUMBER
61048-001
61048-101
61048-002
61048-102
61048-003
61048-103
61048-004
61048-104
PART DESCRIPTION
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55
°
to +100
°
C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55
°
to +100
°
C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55
°
to +100
°
C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55
°
to +100
°
C) with 100% screening
I
L
Range
5 to 20mA
5 to 20mA
20 to 30mA
20 to 30mA
30 to 50mA
30 to 50mA
+50mA
+50mA
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
6-5
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