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DF08

Description
1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size461KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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DF08 Overview

1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

DF005 THRU DF10
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
Reverse Voltage – 50 to 1000 Volts
Forward Current – 1.0 Ampere
Features
Glass passivated chip junction
Low forward voltage drop
High surge overload rating of 50 Amperes peak
Ideal for printed circuit board
High temperature soldering guaranteed:
260
O
C for 10 seconds
Mechanical Data
Case: Molded plastic, DB
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
Mounting position: Any
Weight: 0.02ounce, 0.4gram
Absolute Maximum Ratings and Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load,
derate current by 20%.
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 40
O
C
Peak Forward Surge Current, 8.3ms single half-sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage at 1A DC
Maximum Reverse Voltage
at Rated DC Blocking Voltage
Typical Junction Capacitance
1)
Typical Thermal Resistance
2)
Typical Thermal Resistance
2)
Operating and storage temperature range
1)
2)
DF005
50
35
50
DF01
100
70
100
DF02
200
140
200
DF04
400
280
400
1
50
1.1
5
500
25
40
15
-55 to +150
DF06
600
420
600
DF08
800
560
800
DF10
1000
700
1000
Units
V
V
V
A
A
V
µA
pF
O
O
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
at T
A
= 25
O
C
at T
A
=125 C
O
I
R
C
J
R
θJA
R
θJL
T
J
,T
S
C/W
C/W
O
C
Measured at 1MHz and applied reverse voltage of 4VDC.
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5″ (13 x 13mm) copper pads.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated :28/09/2005 H

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DF08 DF005 DF01 DF04 DF02 DF10 DF06
Description 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
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