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DB106

Description
1 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size39KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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1 A, SILICON, BRIDGE RECTIFIER DIODE

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
DB101
THRU
DB107
1 Amp Single Phase
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
DB-1
Notch
Features
Through Hole Package
Glass Passivated Diode Construction
Moisture Resistant Epoxy Case
High Surge Current Capability
Maximum Ratings
Operating Junction Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Catalog
Number
DB101
DB102
DB103
DB104
DB105
DB106
DB107
B
-
~
A
+
C
~
DB101
DB102
DB103
DB104
DB105
DB106
DB107
E
D
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1A
T
A
= 40°C
Current
Peak Forward Surge
I
FSM
50A
8.3ms, half sine
Current
Maximum
1.1V
I
FM
= 1.0A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C
Maximum DC
Reverse Current At
I
R
10µA
T
J
= 25°C
Rated DC Blocking
0.5mA T
J
= 125°C
Voltage
Typical Junction
C
J
25pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%
DIMENSIONS
INCHES
MIN
.320
.245
.300
.236
.120
.016
.195
MM
MIN
8.13
6.20
7.60
6.01
3.05
0.41
5.00
DIM
A
B
C
D
E
F
G
MAX
.335
.255
.350
.283
.130
.022
.205
MAX
8.51
6.50
8.90
7.20
3.30
0.56
5.20
NOTE
www.cnelectr.com

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Description 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
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