Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,
| Parameter Name | Attribute value |
| Maker | Galaxy Microelectronics |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 0.2 A |
| Collector-emitter maximum voltage | 45 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 210 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 80 MHz |
| Base Number Matches | 1 |
| 2SB1218A-R | 2SB1218A | 2SB1218A-Q | 2SB1218A-S | |
|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, | General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 45V; IC (A): 0.2A; HFE Min: 160; HFE Max: 460; VCE (V): 10V; IC (mA): 2mA; VCE(SAT) (V): 0.5V; IC (mA)1: 100mA; IB (mA): 10mA; FT Min (MHz): 60 MHz; PTM Max (W): 0.15W; Package: SOT-323; package_code: SOT-323; mfr_package_code: SOT-323 | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, |
| Maker | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Maximum collector current (IC) | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
| Collector-emitter maximum voltage | 45 V | 45 V | 45 V | 45 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 210 | 160 | 160 | 290 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| surface mount | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 80 MHz | 80 MHz | 80 MHz | 80 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
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