2SB1218A-S datasheet, PDF - EEWORLD Datasheet

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2SB1218A-S: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,; CategoryDiscrete semiconductor The transistor; File Size366KB，4 Pages; ManufacturerGalaxy Microelectronics

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2SB1218A-S Overview

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,

2SB1218A-S Parametric

Parameter Name	Attribute value
Maker	Galaxy Microelectronics
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	290
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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Production specification

PNP Silicon Epitaxial Planar Transistor

FEATURES



High forward current transfer ratio h

Excellent H

Linearity.

Complements the 2SD1819A.

2SB1218A

Lead-free

APPLICATIONS



For general purpose amplification.

SOT-323

ORDERING INFORMATION

Type No.

2SB1218A

Marking

BQ/BR/BS

Package Code

SOT-323

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

CBO

Parameter

Collector-Base Voltage

Value

-45

Units

CEO

EBO

Collector-Emitter Voltage

-45

Emitter-Base Voltage

-7

Collector Current -Continuous

-200

Collector Dissipation

150

℃

stg

Junction and Storage Temperature

-55 to +150

F034

Rev.A

www.gmesemi.com

2SB1218A-S Related Products

	2SB1218A-S	2SB1218A	2SB1218A-Q	2SB1218A-R
Description	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,	General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 45V; IC (A): 0.2A; HFE Min: 160; HFE Max: 460; VCE (V): 10V; IC (mA): 2mA; VCE(SAT) (V): 0.5V; IC (mA)1: 100mA; IB (mA): 10mA; FT Min (MHz): 60 MHz; PTM Max (W): 0.15W; Package: SOT-323; package_code: SOT-323; mfr_package_code: SOT-323	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,
Maker	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	45 V	45 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	290	160	160	210
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	80 MHz
Base Number Matches	1	1	1	1

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