MITSUBISHI IGBT MODULES
CM300DU-12NFH
HIGH POWER SWITCHING USE
CM300DU-12NFH
¡I
C ...................................................................
300A
¡V
CES ............................................................
600V
¡Insulated
Type
¡2-elements
in a pack
APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108
(7.5)
14
93
±0.25
14
T
C
measured point
(7.5)
14
E2 G2
C2E1
E2 G2
E2
C1
6
48
±0.25
(8.25)
CM
G1 E1
17.5 6
(18)
CIRCUIT DIAGRAM
8.85
C2E1
E2
C1
25
3-M6 NUTS
4-φ6. 5 MOUNTING HOLES
25
21.5
2.5
25.7
4
0.5
2.8
7.5
8.5
(7)
0.5
0.5
18
7
18
7
18
0.5
29
+1.0
–0.5
22
LABEL
Feb. 2009
4
G1 E1
15
62
MITSUBISHI IGBT MODULES
CM300DU-12NFH
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
P
C
’
(Note 3)
T
j
T
stg
V
iso
—
—
—
(Tj = 25
°
C, unless otherwise specified)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-E Short
C-E Short
Operation
Pulse
Operation
Pulse
T
C
= 25°C
T
C
’ = 25°C
*4
Conditions
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Ratings
600
±20
300
600
300
600
780
1250
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
Unit
V
V
A
A
A
A
W
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c’)
Q
R
G
Parameter
Collector cutoff current
(Tj = 25
°
C, unless otherwise specified)
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 30mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 300A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 300V, I
C
= 300A, V
GE
= 15V
V
CC
= 300V, I
C
= 300A
V
GE
=
±15V
R
G
= 4.2Ω, Inductive load
I
E
= 300A
I
E
= 300A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied
*2
(1/2 module)
Case temperature measured point is just under the chips (1/2 module)
T
j
= 25°C
T
j
= 125°C
Min.
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
Limits
Typ.
—
6
—
2.0
1.95
—
—
—
1860
—
—
—
—
—
5.5
—
—
—
0.04
—
—
Max.
1
7
0.5
2.7
—
83
5.4
3.0
—
350
150
700
150
200
—
2.6
0.16
0.24
—
0.10
*3
21
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
Ω
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
*1
Contact thermal resistance
Thermal resistance
External gate resistance
*
1 : Case temperature (T
C
) measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
*
4 : Case temperature (T
C
’) measured point is just under the chips.
Note 1. I
E
, I
EM
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
4. No short circuit capability is designed.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM300DU-12NFH
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
3
600
COLLECTOR CURRENT I
C
(A)
500
400
300
200
100
0
13
15
V
GE
=
20V
11
10 T
j
= 25°C
9.5
9
8.5
8
V
GE
= 15V
2.5
2
1.5
1
0.5
7.5
7
T
j
= 25°C
T
j
= 125°C
0
100
200
300
400
500
600
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
7
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
6
8
10
12
14
T
j
= 25°C
EMITTER CURRENT I
E
(A)
5
3
2
I
C
= 600A
I
C
= 300A
I
C
= 120A
10
2
7
5
3
2
T
j
= 25°C
T
j
= 125°C
0
0.5
1
1.5
2
2.5
3
16
18
20
10
1
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
10
2
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
C
ies
SWITCHING TIME (ns)
7
5
3
2
t
d(off)
t
d(on)
10
1
7
5
3
2
10
2
7
5
3
2
C
oes
C
res
t
f
t
r
Conditions:
V
CC
= 300V
V
GE
=
±15V
R
G
= 4.2Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
10
0
7
5
3
2
V
GE
= 0V
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
1 1
10
COLLECTOR CURRENT I
C
(A)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM300DU-12NFH
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10
3
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
7
5
3
2
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part )
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
0
7
5
3
2
Single Pulse
T
C
= 25°C
10
–1
7
5
3
2
10
–1
7
5
3
2
10
2
7
5
3
2
I
rr
t
rr
Conditions:
V
CC
= 300V
V
GE
=
±15V
R
G
= 4.2Ω
T
j
= 25°C
Inductive load
2 3
5 7
10
3
10
–2
7
5
3
Per unit base =
2
10
–2
7
5
3
2
R
th(j–c)
= 0.16K/W
10
1 1
10
2
3
5 7
10
2
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
0
Single Pulse
T
C
= 25°C
10
–1
7
5
3
2
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
I
C
= 300A
16
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
7
5
3
2
V
CC
= 200V
V
CC
= 300V
10
–1
7
5
3
2
12
8
10
–2
7
5
3
Per unit base =
2
10
–2
7
5
3
2
4
R
th(j–c)
= 0.24K/W
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
0
0
500
1000
1500
2000
2500
TIME (s)
GATE CHARGE Q
G
(nC)
Feb. 2009
4
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