MITSUBISHI IGBT MODULES
CM200DY-24NF
HIGH POWER SWITCHING USE
CM200DY-24NF
¡I
C ...................................................................
200A
¡V
CES .........................................................
1200V
¡Insulated
Type
¡2-elements
in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Tc measured point (Base plate)
108
93
±0.25
3-M6 NUTS
G2
4
48
±0.25
62
E1
C2E1
E2
C1
G1
21.5
25
25
24
4-φ6.5 MOUNTING HOLES
18
14
7
18
14
7
18
14
8.5
6
15
TAB #110 t=0.5
E2 G2
30
+1.0
–0.5
C2E1
LABEL
22.2
30
E2
6
E2
C1
G1 E1
CIRCUIT DIAGRAM
Feb.
2009
1
MITSUBISHI IGBT MODULES
CM200DY-24NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise specified)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, T
C
’ = 112°C
*3
Pulse
Pulse
T
C
= 25°C
Conditions
Ratings
1200
±20
200
400
200
400
1130
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
N•m
g
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c’)
Q
R
G
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
*1
Contact thermal resistance
Thermal resistance
External gate resistance
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 20mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 200A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 200A, V
GE
= 15V
V
CC
= 600V, I
C
= 200A
V
GE
=
±15V
R
G
= 1.6Ω, Inductive load
I
E
= 200A
I
E
= 200A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied
*2
(1/2 module)
Case temperature measured point is just under the chips
T
j
= 25°C
T
j
= 125°C
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
Limits
Typ.
—
7
—
1.8
2.0
—
—
—
1350
—
—
—
—
—
7.5
—
—
—
0.04
—
—
Max.
1
8
0.5
2.5
—
47
4
0.9
—
500
150
600
350
250
—
3.2
0.11
0.19
—
0.066
*3
16
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
Ω
*
1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*
3 : Case temperature (Tc’) measured point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
Feb.
2009
2
MITSUBISHI IGBT MODULES
CM200DY-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
400
350
300
250
200
150
100
50
0
0
V
GE
=
20V
12
4
15
13
T
j
= 25°C
V
GE
= 15V
3
11
2
10
9
2
4
6
8
10
1
T
j
= 25°C
T
j
= 125°C
0
0
50 100 150 200 250 300 350 400
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
7
10
T
j
= 25°C
EMITTER CURRENT I
E
(A)
8
5
3
2
6
10
2
7
5
3
2
4
I
C
= 200A
I
C
= 400A
I
C
= 80A
2
T
j
= 25°C
T
j
= 125°C
0
1
2
3
4
5
0
6
8
10
12
14
16
18
20
10
1
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
10
2
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
C
ies
SWITCHING TIME (ns)
7
t
f
5
t
d(on)
3
2
7
5
3
2
t
d(off)
10
1
7
5
3
2
10
2
t
r
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
C
oes
10
0
7
5
3
2
10
1
7
5
3
2
C
res
V
GE
= 0V
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
0 1
10
COLLECTOR CURRENT I
C
(A)
Feb.
2009
3
PCB Design
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