SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBB540-G Thru. CDBB5100-G
Reverse Voltage: 40,60,100 Volts
Forward Current: 5.0 Amp
RoHS Device
Features
-Batch process design, excellent powe
dissipation offers better reverse leakage
current and thermal resistance.
-Low profile surface mounted application
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
SMB-1
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
0.168(4.2)
0.150(3.8)
Mechanical data
-Case:
Molded plastic, JEDEC SMB.
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight:0.09 gram(approx.).
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings
(at T
A
=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Maximum RMS voltage
Continuous reverse voltage
Maximum forward voltage @I
F
=1.0A
Forward rectified current
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Reverse current on V
R
=V
RRM
@T
A
=25°C
@T
A
=125°C
Typ. thermal resistance, junction to ambient air
Typ. diode junction capacitance (Note 1)
Operating junction temperature
Storage temperature
Note 1: f=1MHz and applied 4V DC reverse voltage.
Symbol
V
RRM
V
RMS
V
R
V
F
I
O
I
FSM
I
R
R
θJA
C
J
T
J
T
STG
CDBB540-G
40
28
40
0.55
CDBB560-G
60
42
60
0.75
5.0
150
0.5
50
12
380
CDBB5100-G
100
70
100
0.85
Unit
V
V
V
V
A
A
mA
°C/W
pF
-55 to +150
-55 to +125
-65 to +175
°C
°C
REV:A
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Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
Rating and Characteristic Curves (CDBB540-G Thru. CDBB5100-G)
Fig.1 Reverse Characteristics
100
100
6
B5
DB
Fig.2 Forward Characteristics
-G
0-
G
40
BB
5
I
R
, Reverse Current (mA)
Ι
F
, Forward Current (A)
C
CD
10
10
C
1
B5
DB
00
-G
1
T
J
=75°C
1
0.1
T
J
=25°C
0.1
0.01
0
40
80
120
160
200
0.01
0.1
0.5
0.9
1.3
1.7
2.1
Percent of Rated Peak Reverse Voltage (%)
V
F
, Forward Voltage (V)
Fig.3 Junction Capacitance
1400
7
Fig.4 Current Derating Curve
C
J
, Junction Capacitance (pF)
1200
1000
800
600
400
200
0
0.01
I
O
, Average Forward Current (A)
f=1MHz
Applied 4VDC
reverse voltage
6
5
4
CD
CD
54
BB
5
BB
3
2
1
0
60
0-G
.C
-G
1
B5
DB
00
-G
0.1
1
10
100
20
40
60
80
100
120
140
160
V
R
, Reverse Voltage (V)
T
A
, Ambient Temperature (°C)
Fig.5 Non-repetitive Forward
Surge Current
150
I
FSM
, Peak Forward Surge Current (A)
T
J
=25°C
8.3ms single half sine
wave, JEDEC method
120
90
60
30
0
1
10
100
Number of Cycles at 60Hz
REV:A
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Comchip Technology CO., LTD.
Power technology
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