DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP54; BCP55; BCP56
NPN medium power transistors
Product specification
Supersedes data of 2001 Oct 10
2003 Feb 06
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES
•
High collector current
•
1.3 W power dissipation.
APPLICATIONS
•
General purpose medium power DC applications
•
Low and medium frequency AC applications
•
Peripheral drivers
•
Linear voltage regulators and battery chargers.
handbook, halfpage
BCP54; BCP55; BCP56
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
4
2, 4
1
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BCP51, BCP52 and BCP53.
3
1
Top view
2
3
MAM287
Fig.1
Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
collector-emitter voltage
collector current (DC)
peak collector current
PARAMETER
80
1
1.5
MAX.
V
A
A
UNIT
2003 Feb 06
2
Philips Semiconductors
Product specification
NPN medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BCP54
BCP55
BCP56
V
CEO
collector-emitter voltage
BCP54
BCP55
BCP56
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BCP54; BCP55; BCP56
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
45
60
100
45
60
80
5
1
1.5
0.2
1.33
+150
150
+150
V
V
V
V
V
V
V
A
A
A
W
UNIT
°C
°C
°C
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
94
13
UNIT
K/W
K/W
2003 Feb 06
3
Philips Semiconductors
Product specification
NPN medium power transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
BCP54; BCP55; BCP56
MIN.
−
−
−
63
63
40
63
100
TYP. MAX. UNIT
−
−
−
−
−
−
−
−
−
−
−
130
−
160
250
500
1
−
1.6
mV
V
MHz
100
10
100
−
250
−
nA
µA
nA
I
E
= 0; V
CB
= 30 V; T
j
= 125
°C
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V
I
C
= 500 mA; V
CE
= 2 V
h
FE
DC current gain
BCP54-10; BCP55-10; BCP56-10
BCP54-16; BCP55-16; BCP56-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
= 0.5 A; I
B
= 50 mA
I
C
= 0.5 A; V
CE
= 2 V
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V
−
−
−
−
2003 Feb 06
4
Philips Semiconductors
Product specification
NPN medium power transistors
PACKAGE OUTLINE
BCP54; BCP55; BCP56
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2003 Feb 06
5
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