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3N163

Description
Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF,
CategoryDiscrete semiconductor    The transistor   
File Size127KB,4 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
Download Datasheet Parametric Compare View All

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3N163 Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF,

3N163 Parametric

Parameter NameAttribute value
MakerTEMIC
Reach Compliance Codeunknown
Shell connectionSUBSTRATE
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)0.05 A
Maximum drain-source on-resistance250 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.7 pF
JEDEC-95 codeTO-206AF
JESD-30 codeO-MBCY-W4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

3N163 Related Products

3N163 3N164
Description Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF, Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF,
Maker TEMIC TEMIC
Reach Compliance Code unknown unknown
Shell connection SUBSTRATE SUBSTRATE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 40 V 30 V
Maximum drain current (ID) 0.05 A 0.05 A
Maximum drain-source on-resistance 250 Ω 300 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.7 pF 0.7 pF
JEDEC-95 code TO-206AF TO-206AF
JESD-30 code O-MBCY-W4 O-MBCY-W4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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