3N205 datasheet, PDF - EEWORLD Datasheet

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3N205: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, CASE 20-03, TO-72, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size396KB，7 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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3N205 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, CASE 20-03, TO-72, 4 PIN

3N205 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknown
Shell connection	SOURCE AND SUBSTRATE
Configuration	SINGLE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (Abs) (ID)	0.05 A
Maximum drain current (ID)	0.05 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-206AF
JESD-30 code	O-MBCY-W4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

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3N205 Related Products

	3N205	3N209	3N204
Description	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, CASE 20-03, TO-72, 4 PIN	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, CASE 20-03, TO-72, 4 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	CYLINDRICAL, O-MBCY-W4	,	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknown	unknown	unknown
Configuration	SINGLE	Single	SINGLE WITH BUILT-IN DIODE
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DEPLETION MODE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1	1
Shell connection	SOURCE AND SUBSTRATE	-	SOURCE
Minimum drain-source breakdown voltage	25 V	-	25 V
Maximum drain current (Abs) (ID)	0.05 A	0.03 A	-
Maximum drain current (ID)	0.05 A	-	0.05 A
Maximum feedback capacitance (Crss)	0.03 pF	-	0.03 pF
highest frequency band	VERY HIGH FREQUENCY BAND	-	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-206AF	-	TO-206AF
JESD-30 code	O-MBCY-W4	-	O-MBCY-W4
Number of components	1	-	1
Number of terminals	4	-	4
Maximum operating temperature	200 °C	200 °C	-
Package body material	METAL	-	METAL
Package shape	ROUND	-	ROUND
Package form	CYLINDRICAL	-	CYLINDRICAL
Maximum power dissipation(Abs)	0.36 W	0.3 W	-
Certification status	Not Qualified	-	Not Qualified
Terminal form	WIRE	-	WIRE
Terminal location	BOTTOM	-	BOTTOM
Transistor component materials	SILICON	-	SILICON

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