LED DOT MATRIX
BL-M14X581xx
n
Ø
Ø
Ø
Ø
Ø
Ø
Features:
37.40mm (1.4” F 3.0 dot matrix LED display, bi-color
)
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Electrical-optical characteristics: (Ta=25℃)
(Test Condition: IF=20mA)
Part No
Chip
Emitted Color
Material
λ
P
(nm)
VF
Unit:V
Iv
Typ
Max
TYP.(mcd)
Row Cathode
Column Anode
Row Anode
Column Cathode
BL-M14A581SG-XX
BL-M14B581SG-XX
Super Red
Green
AlGaInP
GaP/GaP
GaAsP/Ga
P
GaP/GaP
AlGaInP
AlGaInP
AlGaInP
AlGaInP
660
570
635
570
660
574
630
574
2.10
2.20
2.10
2.20
2.10
2.20
2.10
2.20
2.50
2.50
2.50
2.50
2.50
2.50
2.50
2.50
100
95
90
95
110
130
100
130
BL-M14A581EG-XX
BL-M14B581EG-XX
Orange
Green
BL-M14A581DUG-XX
BL-M14B581DUG-XX
Ultra Red
Ultra Green
BL-M14A581UEUG-X
X
BL-M14B581UEUG-X
X
Ultra Orange
Ultra Green
n
-XX: Surface / Lens color：
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
1
Black
White
diffused
2
Gray
Red
Diffused
3
Red
Green
Diffused
4
Green
Yellow
Diffused
5
n
Absolute maximum ratings (Ta=25°
C)
S
30
75
5
150
Parameter
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
Lead Soldering Temperature
T
SOL
G
30
80
5
150
E
30
80
5
150
D
30
75
5
150
UG
30
75
5
150
UE
30
65
5
150
U
nit
mA
mW
V
mA
℃
℃
-40 to +80
-40 to +85
Max.260±5
℃
for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
℃
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 1 of 3
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EMAIL:
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,
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LED DOT MATRIX
BL-M14X581xx
■
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 2 of 3
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EMAIL:
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,
BETLUX@BETLUX.COM
LED DOT MATRIX
BL-M14X581xx
■
Typical electrical-optical characteristics curves:
1.0
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH(
λ
p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
REL ATIVE LUMIN OU S IN TENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
1
3.0
FORWARD CURRENT(mA)
50
40
30
20
10
0
RELATIVE LUMINOUS INTENSITY
40
30
20
10
0
1.2
1
6
2,4,8,A
3
5
2.0
5
B
1.0
0
20
40
60
80
100
1.6
2.0
2.4
2.6
3.0
20
40
60
80
100
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta(
℃
)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
3KHz
300KHz
1KHz
100KHz F-REFRESH RATE
10 10KHz
9
8
7
6
5
Ipeak M AX.
IDC MAX.
4
3
2
0
10
20
30
40
50
60
70
1
AMBIENT TEMPERATURE Ta(
℃
)
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
10,000
Ipeak MAX.
IDC MAX.
30KHz
3KHz
300Hz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
10,000
NOTE:25
℃
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 3 of 3
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EMAIL:
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,
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Embedded System
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