LED DOT MATRIX
BL-M12X881XX
Features:
39.10mm (1.2”)
Φ3.0
dot matrix LED display. BI-COLOR
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Electrical-optical characteristics: (Ta=25 )
(Test Condition: IF=20mA)
Part No
Chip
Emitted Color
λ
P
(nm)
VF
Unit:V
Iv
Typ
Max
TYP.(mcd)
Row Cathode
Column Anode
Row Anode
Column Cathode
BL-M12A881SG-XX
BL-M12B881SG-XX
Super Red
Green
BL-M12A881EG-XX
BL-M12B881EG-XX
BL-M12A881DUG-XX
BL-M12A881UEUG-X
X
Absolute maximum ratings (Ta=25°
C)
Parameter
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
Lead Soldering Temperature
T
SOL
S
30
75
5
150
w
Max.260±5
for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
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-XX: Surface / Lens color
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
e
.b
w
w
Ultra Green
BL-M12B881UEUG-X
X
Ultra Green
BL-M12B881DUG-XX
Ultra Red
Ultra Orange
1
Black
White
diffused
G
30
80
5
150
Material
AlGaInP
GaP/GaP
660
570
635
570
Orange
Green
GaAsP/Ga
P
GaP/GaP
u
tl
3
E
D
30
75
5
150
AlGaInP
AlGaInP
.
x
660
574
630
574
m
o
c
2.10
2.50
2.20
2.10
2.20
2.50
2.50
2.50
2.10
2.20
2.10
2.20
2.50
2.50
2.50
2.50
200
195
190
195
320
250
235
250
AlGaInP
AlGaInP
2
4
Green
Yellow
Diffused
5
Gray
Red
Diffused
Red
Green
Diffused
UG
30
75
5
150
UE
30
65
5
150
U
nit
mA
mW
V
mA
30
80
5
150
-40 to +80
-40 to +85
LED DOT MATRIX
BL-M12X881XX
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
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Package configuration & Internal circuit diagram
w
e
.b
w
w
u
tl
.
x
m
o
c
LED DOT MATRIX
BL-M12X881XX
1.0
0.5
0
350
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
40
30
20
10
0
1.2
3.0
1.6
2.0
2.4
2.6
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
w
0
10
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
10
9
8
7
6
5
4
3
2
20
30
40
50
60
70
1
1
Ipeak MAX.
IDC MAX.
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
AMBIENT TEMPERATURE Ta( )
10
100
1000
10,000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
free air temperature unless otherwise specified
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REV NO: V.2
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e
.b
w
w
2.0
1.0
0
3.0
20
40
60
u
tl
1
5
B
100
80
§
¥
§
¤
Typical electrical-optical characteristics curves:
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
400
450
500
550
600
650
700
750
800
850
900
950
1000
.
x
50
40
30
20
10
0
FORWARD CURRENT(mA)
m
o
c
20
40
60
80
100
RELATIVE LUMINOUS INTENSITY
1
6
2,4,8,A
3
5
10,000
Embedded System
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