Rectangular Type, BI-COLOR LED lamp
BL-L2519
Part Number
Emitted Color
Material
λ
P
(nm)
BL-L2519EGW
BL-L2519YGW
BL-L2519UEUGW
Parameter
Storage Temperature T
STG
Lead Soldering Temperature
T
SOL
-40 to +85
Max.260±5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
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¡
¡
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
¢
Features:
2.0*5.0mm Rectangular Type BI-COLOR LED Lamps, with 3 leads.
Ultra brightness.
Choice of various viewing angles.
Diffused, Transparent and Water clear lens are available.
IC compatible /Low current capability.
RoHs Compliance
Electrical-optical characteristics: (Ta=25
℃
)
Chip
(Test Condition: IF=20mA)
Luminous
Intensity
(Iv)
Unit:mcd
Lens
Type
Forward
Voltage(VF)
Unit:V
Viewing
Angle
2θ1/2(d
eg)
Orange
Green
Yellow
Green
GaAsP/GaP
GaP/GaP
GaAsP/GaP
GaP/GaP
AlGaInP
635
Absolute maximum ratings (Ta=25
℃
)
w
e
.b
w
w
Ultra Yellow
Ultra Green
AlGaInP
u
tl
570
585
570
Water
Diff.
630
574
.
x
Typ
2.10
2.20
2.10
2.20
2.10
2.20
Max
2.50
2.50
m
o
c
Min.
7
Typ
20
4
15
4
4
80
60
15
15
160
110
2.50
2.50
110
2.50
2.50
E
UE
Y
G
UG
Unit
25
60
5
150
30
65
5
150
25
60
5
150
-40 to +80
30
65
5
150
30
75
5
150
mA
mW
V
mA
Rectangular Type, BI-COLOR LED lamp
BL-L2519
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
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Package configuration & Internal circuit diagram
5.1
(0.201)
5.0
(0.197)
2.1
(0.083)
2.0
(0.079)
7.0
(0.276)
1.0
(0.039Max)
2.0
(0.079)
w
e
.b
w
w
25.4
(1.00M in)
(1)
(2)
u
tl
.
x
m
o
c
2.54
(0.10)
PIN1
PIN2
PIN3
(3)
2.54
(0.10)
1.0
(0.039Min)
0.5
(0.020)
GREEN
RED
ORANGE
YELLOW
ANODE
CATHODE CATHODE
ANODE
Rectangular Type, BI-COLOR LED lamp
BL-L2519
1.0
0.5
0
350
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
40
30
20
10
0
1.2
3.0
1.6
2.0
2.4
2.6
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
w
0
10
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
10
9
8
7
6
5
4
3
2
20
30
40
50
60
70
1
1
Ipeak MAX.
IDC MAX.
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
AMBIENT TEMPERATURE Ta( )
10
100
1000
10,000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
free air temperature unless otherwise specified
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¦
e
.b
w
w
2.0
1.0
0
3.0
20
40
60
u
tl
1
5
B
100
80
§
¥
§
£
Typical electrical-optical characteristics curves:
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
400
450
500
550
600
650
700
750
800
850
900
950
1000
.
x
50
40
30
20
10
0
FORWARD CURRENT(mA)
m
o
c
20
40
60
80
100
RELATIVE LUMINOUS INTENSITY
1
6
2,4,8,A
3
5
10,000
Embedded System
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