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933601510113

Description
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size53KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

933601510113 Overview

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

933601510113 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage9.4 V
Shell connectionISOLATED
Maximum clamping voltage14.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation3.25 W
Certification statusNot Qualified
Maximum reverse current20 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BZT03 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Jun 11
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