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BD313

Description
Silicon NPN Power Transistor
File Size176KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

BD313 Overview

Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BD313
DESCRIPTION
·Excellent
Safe Operating Area
·DC
Current Gain-h
FE
= 25(Min.)@I
C
= 4A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 1.0 V(Max)@ I
C
= 5A
·Complement
to Type BD314
APPLICATIONS
·Designed
for high quality amplifiers operating up to 60 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
80
UNIT
V
80
5
V
V
10
A
20
4
115
200
-65~200
A
A
W
P
C
T
J
T
stg
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.52
UNIT
℃/W
isc Website:www.iscsemi.cn
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