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BC639

Description
1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Categorysemiconductor    Discrete semiconductor   
File Size155KB,3 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BC639 Overview

1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC639 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current1.5 A
Maximum Collector-Emitter Voltage80 V
stateTRANSFERRED
packaging shaperound
Package Sizecylindrical
Terminal formTHROUGH-hole
Terminal locationBOTTOM
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Maximum ambient power consumption0.6250 W
Transistor typeUniversal small signal
Minimum DC amplification factor40
Rated crossover frequency130 MHz
ST BC635 / BC637 / BC639
NPN Silicon Epitaxial Planar Transistor
Medium Power Transistors
for driver stages of audio / video amplifiers
1.Emitter 2.Collector 3.Base
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
BC635
BC637
BC639
BC635
BC637
BC639
Symbol
V
CBO
Value
45
60
100
45
60
80
5
1
1.5
100
200
830
150
- 55 to + 150
Unit
V
Collector Emitter Voltage
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
S
V
V
A
A
mA
mA
mW
O
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
C
C
O
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2007

BC639 Related Products

BC639 BC637 BC635
Description 1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 NPN medium power transistors
Number of terminals 3 3 -
Transistor polarity NPN NPN -
Maximum collector current 1.5 A 1.5 A -
Maximum Collector-Emitter Voltage 80 V 80 V -
state TRANSFERRED TRANSFERRED -
packaging shape round round -
Package Size cylindrical cylindrical -
Terminal form THROUGH-hole THROUGH-hole -
Terminal location BOTTOM BOTTOM -
Packaging Materials Plastic/Epoxy Plastic/Epoxy -
structure single single -
Number of components 1 1 -
transistor applications amplifier amplifier -
Transistor component materials silicon silicon -
Maximum ambient power consumption 0.6250 W 0.6250 W -
Transistor type Universal small signal Universal small signal -
Minimum DC amplification factor 40 40 -
Rated crossover frequency 130 MHz 130 MHz -

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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