BAT30
Small signal Schottky diodes
Features
■
■
■
■
■
■
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
Extremely fast switching
Surface mount device
Low capacitance diode
SOD-923
SOD-523
SOD-323
BAT30JFILM
(Single)
BAT30KFILM
(Single)
BAT30LFILM
(Single)
Description
The BAT30 series uses 30 V Schottky barrier
diodes encapsulated in a wide range of packages
such as SOD-323, SOD-523, SOD-923, SOT-23,
SOT-323, or SOT-666. This device is specially
suited for switching mode applications needing
low forward voltage drop diodes.
BAT30FILM
(Single)
SOT-23
BAT30AFILM
(Common anode)
BAT30SFILM
(Series)
BAT30CFILM
(Common cathode)
BAT30WFILM
(Single)
BAT30CWFILM
(Common cathode)
BAT30AWFILM
(Common anode)
BAT30SWFILM
(Series)
SOT-323
Table 1.
Device summary
Symbol
I
F
V
RRM
C(typ)
T
j
(max)
Value
300 mA
30 V
14 pF
150 °C
BAT30-07P6FILM
(2 parallel diodes)
SOT-666
BAT30-09P6FILM
(2 opposite diodes)
Configurations in top view
October 2009
Doc ID 12564 Rev 3
1/14
www.st.com
14
Characteristics
BAT30
1
Characteristics
Table 2.
Symbol
V
RRM
I
F
I
FSM
T
stg
T
j
T
L
Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
(1)
Maximum soldering temperature
t
p
= 10 ms Sinusoidal
Value
30
300
1
-65 to +150
150
260
Unit
V
mA
A
°C
°C
°C
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
Table 3.
Symbol
Thermal parameters
Parameter
SOT-23
Value
500
550
°C/W
SOD-523, SOT-666
SOD-923
600
900
Unit
R
th(j-a)
Junction to ambient
(1)
SOT-323, SOD-323,
1. On epoxy printed circuit board with recommended pad layout
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
V
R
= 5 V
T
j
= 25 °C
V
R
= 10 V
V
R
= 25 V
V
R
= 30 V
T
j
= 70 °C
T
j
= 85 °C
V
R
= 10 V
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
0.65
-
7
18
-
-
-
-
-
-
530
Max.
0.5
1
3
µA
5
20
50
240
300
375
430
500
580
-
mV
Unit
I
R(1)
Reverse leakage current
V
F(2)
Forward voltage drop
T
j
= 25° C I
F
= 30 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 300 mA
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
2/14
Doc ID 12564 Rev 3
BAT30
Table 5.
Symbol
Characteristics
Dynamic characteristics
Parameter
Test conditions
V
R
= 0 V, F = 1 MHz
Min.
-
-
-
Typ
22
14
6
Max.
-
-
-
pF
Unit
C
Diode capacitance
V
R
= 1 V, F = 1 MHz
V
R
= 10 V, F = 1 MHz
Figure 1.
Power dissipation versus average
forward current
Figure 2.
I
F(AV)
(A)
Average forward current versus
ambient temperature (δ = 1)
P (W)
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
0.00
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
0.35
0.30
0.25
0.20
0.15
0.10
0.05
tp
T
T
I
F(AV)
(A)
δ
=tp/T
0.25
0.30
δ
=tp/T
0.00
0.35
tp
T
amb
(° C)
0.05
0.10
0.15
0.20
0
25
50
75
100
125
150
Figure 3.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z
th(j-a)
/R
th(j-a)
1.E+00
Single pulse
SOT-23
Z
th(j-a)
/R
th(j-a)
1.E+00
Single pulse
SOT-323/SOD-323
Epoxy printed board FR4
Copper surface = 2.25 mm2
Coppr thickness = 35 µm
1.E-01
1.E-01
1.E-02
Alumine substrate
10 x 8 x 0.5 mm
1.E-02
1.E-03
t
P
(s)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t
P
(s)
1.E-03
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Doc ID 12564 Rev 3
3/14
Characteristics
BAT30
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z
th(j-a)
/R
th(j-a)
1.E+00
Single pulse
SOT-666
Z
th(j-a)
/R
th(j-a)
1.E+00
Single pulse
SOD-923
Epoxy printed board FR4
Coppr thickness = 35 µm
1.E-01
1.E-01
t
P
(s)
t
P
(s)
1.E-02
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E-02
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under each lead (SOD-923)
Z
th(j-a)
/R
th(j-a)
1.E+00
Single pulse
SOD-523
R
th(j-a)
(°C/W)
900
800
Epoxy printed board FR4
Coppr thickness = 35 µm
Epoxy printed board FR4
Copper thichness = 35 µm
700
600
500
400
1.E-01
1.E-02
300
200
t
P
(s)
100
0
S
CU
(cm²)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1.E-03
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Figure 9.
Thermal resistance junction to
ambient versus copper surface
under each lead (SOD-323)
Figure 10. Leakage current versus reverse
applied voltage (typical values)
IR (µA)
R
th(j-a)
(°C/W)
600
Epoxy printed board FR4
Copper thichness = 35 µm
1.E+04
1.E+03
T
j
=150°C
T
j
=125°C
500
1.E+02
T
j
=85°C
400
1.E+01
1.E+00
300
T
j
=25°C
1.E-01
200
0
5
10
15
S
CU
(mm²)
V
R
(V)
1.E-02
20
25
30
35
40
45
50
0
5
10
15
20
25
30
4/14
Doc ID 12564 Rev 3
BAT30
Characteristics
Figure 11. Relative variation of reverse
leakage current versus junction
temperature (typical values)
I
R
[T
j
] / I
R
[T
j
=25°C]
Figure 12. Junction capacitance versus
reverse applied voltage
(typical values)
C(pF)
1.E+04
V
R
=30 V
100
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
1.E+03
1.E+02
1.E+01
10
1.E+00
1.E-01
T
j
(°C)
V
R
(V)
1.E-02
-40
-20
0
20
40
60
80
100
120
140
160
1
1
10
100
Figure 13. Forward voltage drop versus
forward current (typical values)
1.E+01
I
FM
(A)
Figure 14. Forward voltage drop versus
forward current (typical values)
I
FM
(A)
1.E+01
1.E+00
T
j
=150 °C
1.E+00
1.E-01
1.E-01
T
j
=125 °C
T
j
=25 °C
1.E-02
T
j
=85 °C
1.E-02
T
j
=-40 °C
1.E-03
1.E-03
V
FM
(V)
V
FM
(V)
1.E-04
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.E-04
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Doc ID 12564 Rev 3
5/14
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