BAS16WS
PRV : 100 Volts
Io : 250 mA
SMALL SIGNAL DIODE
SOD-323
0.40
0.15 (max)
2.80
2.30
0.25
1.80
1.60
1.35
FEATURES :
* Silicon Epitaxial Planar Diode
* Fast switching diodes.
* Pb / RoHS Free
1.10
0.80
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
1.15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified
.
Parameter
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Continuous)
Surge Forward Current at t = 1 s and Tj = 25
°C
Power Dissipation at T
amb
= 25
°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
V
RM
I
F(AV)
I
FSM
P
tot
Tj
T
S
Value
75
100
250
500
200
1)
150
-65 to + 150
Unit
V
V
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(Rating at Tj =
Parameter
Forward Voltage at I
F
= 50 mA
Leakage Current
at V
R
=25 V, Tj=150°C
at V
R
= 75 V
at V
R
=75 V, Tj=150°C
Capacitance at V
F
= V
R
= 0 V
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 10 mA,
I
R
= 6 V, R
L
= 100
Ω
Thermal Resistance Junction to Ambient Air
R
thJA
Trr
V
F
I
R
I
R
I
R
C
tot
25
°C
unless otherwise specified)
Symbol
Min.
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
1
30
1
50
4
6
650
1)
Unit
V
nA
μA
μA
pF
ns
°C/W
Note : 1) Valid provided that electrodes are kept at ambient temperature
Page 1 of 2
Rev. 04 : December 21, 2005
RATINGS AND CHARACTERISTIC CURVES ( BAS16WS)
Forward charecteristics
mA
10
3
Dynamic forward resistance
versus forward current
V
10
4
5
2
10
2
T
j
= 25
°C
f = 1 kHz
T
j
= 100
°C
T
j
= 25
°C
10
3
5
i
F
10
r
F
2
10
2
5
1
2
10
10
-1
5
2
10
-2
0
1
2V
1
10
-2
10
-1
1
10
10
2
mA
V
F
I
F
Admissible power dissipation
versus ambient temperture
For conditions, see footnote in table
"Absolute Maximum Ratings"
mW
500
Relative capacitance
versus reverse voltage
400
C
tot
(V
R
)
1.1
C
tot
(0 V)
1.0
T
j
= 25
°C
f = 1 kHz
P
tot
300
0.9
200
0.8
100
0.7
0
0
100
T
amb
200
°C
0
2
4
6
V
R
8
10 V
Page 2 of 2
Rev. 04 : December 21, 2005
Integrated technical exchanges
京公网安备 11010802033920号
EEWORLD
