INTEGRATED CIRCUITS
DATA SHEET
74AHC541; 74AHCT541
Octal buffer/line driver; 3-state
Product specification
Supersedes data of 1998 Sep 21
File under Integrated Circuits, IC06
1999 Nov 24
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
FEATURES
•
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V
•
Balanced propagation delays
•
All inputs have a Schmitt-trigger action
•
Inputs accepts voltages higher than V
CC
•
For AHC only: operates with CMOS input levels
•
For AHCT only: operates with TTL input levels
•
Specified from
−40
to +85
°C
and
−40
to +125
°C.
QUICK REFERENCE DATA
Ground = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
DESCRIPTION
74AHC541; 74AHCT541
The 74AHC/AHCT541 is a high-speed Si-gate CMOS
device.
The 74AHC/AHCT541 are octal non-inverting buffer/line
drivers with 3-state bus compatible outputs.
The 3-state outputs are controlled by the output enable
inputs OE
0
and OE
1
.
A HIGH on OE
n
causes the outputs to assume a
high-impedance OFF-state.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
O
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
PARAMETER
propagation delay A
n
to Y
n
input capacitance
output capacitance
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
CONDITIONS
AHC
C
L
= 15 pF; V
CC
= 5 V
V
I
= V
CC
or GND
3.5
3
4.0
10
3
4.0
12
AHCT
3.5
ns
pF
pF
pF
UNIT
1999 Nov 24
2
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
FUNCTION TABLE
See note 1.
INPUT
OE
0
L
L
X
H
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
ORDERING INFORMATION
OUTSIDE NORTH
AMERICA
74AHC541D
74AHC541PW
74AHCT541D
74AHCT541PW
PINNING
PIN
1
2, 3, 4, 5, 6, 7, 8 and 9
10
11, 12, 13, 14, 15, 16, 17 and 18
19
20
SYMBOL
OE
0
A
0
to A
7
GND
Y
7
to Y
0
OE
1
V
CC
data inputs
ground (0 V)
OE
1
L
L
H
X
A
n
L
H
X
X
74AHC541; 74AHCT541
OUTPUT
Y
n
L
H
Z
Z
PACKAGES
NORTH AMERICA
PINS
74AHC541D
74AHC541PW DH
74AHCT541D
7AHCT541PW DH
20
20
20
20
PACKAGE
SO
TSSOP
SO
TSSOP
MATERIAL
plastic
plastic
plastic
plastic
CODE
SOT163-1
SOT360-1
SOT163-1
SOT360-1
DESCRIPTION
output enable input
data inputs/outputs
output enable input
DC supply voltage
1999 Nov 24
3
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
74AHC541; 74AHCT541
handbook, halfpage
OE0 1
A0 2
A1 3
A2 4
A3 5
A4 6
A5 7
A6 8
A7 9
GND 10
MNA178
20 VCC
19 OE1
18 Y0
17 Y1
16 Y2
541
15 Y3
14 Y4
13 Y5
12 Y6
11 Y7
Fig.1 Pin configuration.
handbook, halfpage
2
A0
Y0
18
3
A1
Y1
17
handbook, halfpage
1
19
&
4
A2
Y2
EN
18
17
16
15
14
13
12
11
MNA180
16
2
5
A3
Y3
15
3
4
6
A4
Y4
14
5
6
7
A5
Y5
13
7
8
8
A6
Y6
9
12
9
A7
Y7
11
1
19
OE0
OE1
MNA179
Fig.2 Logic symbol.
Fig.3 IEEE/IEC logic symbol.
1999 Nov 24
4
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
RECOMMENDED OPERATING CONDITIONS
74AHC541; 74AHCT541
74AHC
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
DC supply voltage
input voltage
output voltage
operating ambient temperature
see DC and AC
characteristics per
device
V
CC
= 3.3
±0.3
V
V
CC
= 5
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
−40
−
−
TYP. MAX. MIN.
5.0
−
−
+25
+25
−
−
5.5
5.5
V
CC
+85
4.5
0
0
−40
74AHCT
UNIT
TYP. MAX.
5.0
−
−
+25
+25
−
−
5.5
5.5
V
CC
+85
V
V
V
°C
+125
−40
100
20
−
−
+125
°C
−
20
ns/V
t
r
,t
f
(∆t/∆f) input rise and fall times
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO-package: above 70
°C
the value of P
D
derates linearly with 8 mW/K.
For TSSOP-package: above 60
°C
the value of P
D
derates linearly with 5.5 mW/K.
PARAMETER
DC supply voltage
input voltage
DC input diode current
DC output diode current
DC V
CC
or GND current
storage temperature
power dissipation per package
for temperature range:
−40
to +125
°C;
note 2
V
I
< −0.5
V; note 1
V
O
< −0.5
V or V
O
>
V
CC
+ 0.5 V; note 1
CONDITIONS
MIN. MAX. UNIT
−0.5
−0.5
−
−
−
−
−65
−
+7.0
+7.0
−20
±20
±25
±75
500
V
V
mA
mA
mA
mA
mW
DC output source or sink current
−0.5
V
<
V
O
<
V
CC
+ 0.5 V
+150
°C
1999 Nov 24
5
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