LESHAN RADIO COMPANY, LTD.
Dual Series Switching Diode
1
ANODE
3
CAHODE/ANODE
2
CATHODE
BAV99LT1
3
1
2
DEVICE MARKING
CASE 318–08, STYLE 11
BAV99LT1 = A7
SOT–23 (TO–236AB)
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0
µ
s
t = 1.0 ms
t = 1.0 S
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
I
FRM
I
FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Characteristic
Total Device Dissipation
FR–5 Board, (1) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–65 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
V
(BR)
I
R
Min
70
—
––
––
C
D
V
F
Max
—
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
µAdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
(BR)
= 100
µA)
Reverse Voltage Leakage Current (V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage (I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc, R
L
= 100Ω ) (Figure 1)
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
—
––
—
––
––
pF
mVdc
t
rr
V
FR
—
—
ns
V
G7–1/2
LESHAN RADIO COMPANY, LTD.
BAV99LT1
+10 V
820
Ω
2.0 k
0.1µF
t
r
t
t
I
F
t
rr
t
p
100
µH
I
F
10%
0.1
µF
50
Ω
OUTPUT
PULSE
GENERATOR
D.U.T.
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
90%
i
R(REC)
= 1.0 mA
INPUT SIGNAL
V
R
I
R
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH DIODE
100
10
I
F
, FORWARD CURRENT (mA)
T
A
= 85°C
10
I
R
, REVERSE CURRENT (µA)
T
A
= 150°C
1.0
T
A
= 125°C
T
A
= – 40°C
0.1
T
A
= 85°C
T
A
= 55°C
1.0
T
A
= 25°C
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0
10
T
A
= 25°C
20
30
40
50
V
F
, FORWARD VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
C
D
,TOTAL CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
G7–2/2
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