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934001240115

Description
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size91KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

934001240115 Overview

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

934001240115 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LELF-R2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage340 V
Shell connectionISOLATED
Maximum clamping voltage498 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak reverse power dissipation300 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.8 W
Certification statusNot Qualified
Maximum reverse current5 µA
surface mountYES
technologyAVALANCHE
Terminal formWRAP AROUND
Terminal locationEND
DISCRETE SEMICONDUCTORS
DATA SHEET
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Product specification
Supersedes data of October 1991
1996 Jun 10
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