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BDS11SMD05-QR-B

Description
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size41KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BDS11SMD05-QR-B Overview

Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN

BDS11SMD05-QR-B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionHERMETIC SEALED, CERAMIC, SMD05, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-276AA
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1
BDS10
BDS11
BDS12
BDS10SMD
BDS11SMD
BDS12SMD
BDS10SMD05
BDS11SMD05
BDS12SMD05
MECHANICAL DATA
Dimensions in mm(inches)
10.6 (0.42)
0.8
(0.03)
4.6 (0.18)
SILICON NPN EPITAXIAL
BASE IN TO220 METAL AND
CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
1.0
(0.039)
2.70
(0.106)
16.5 (0.65)
3.70 Dia. Nom
1 2 3
12.70 (0.50 min)
HERMETIC METAL OR CERAMIC PACKAGES
HIGH RELIABILITY
MILITARY AND SPACE OPTIONS
SCREENING TO CECC LEVELS
FULLY ISOLATED (METAL VERSION)
1.5(0.53)
10.6 (0.42)
APPLICATIONS
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
7.54 (0.296)
0.76 (0.030)
2.54 (0.1)
BSC
TO220M
- TO220 Metal Package - Isolated (TO-257AB)
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 )
M a x .
3.05 (0.120)
min.
2.41 (0.095)
2.41 (0.095)
0.127 (0.005)
3.175 (0.125)
Max.
1
3
0 .7 6
(0 .0 3 0 )
m in .
1
3
10.16 (0.400)
0.127 (0.005)
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
5.72 (.225)
2
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
0.76
(0.030)
min.
2
0.127 (0.005)
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
16 PLCS
0.50(0.020)
7.26 (0.286)
0.50 (0.020)
max.
SMD1
- Ceramic Surface Mount Package (TO-276AB)
Pin 1
– Base
SMD05
- Ceramic Surface Mount Package (TO-276AA)
Pin 3
– Emitter
Pin 2
– Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
BDS10
V
CBO
V
CEO
V
EBO
I
E
, I
C
I
B
P
tot
T
stg
T
j
Collector - Base voltage (I
E
= 0)
Collector - Emitter voltage (I
B
= 0)
Emitter - Base voltage (I
C
= 0)
Emitter , Collector current
Base current
Total power dissipation at T
case
=
25°C
Storage Temperature
Junction Temperature
60V
60V
BDS11
BDS12
80V
100V
80V
100V
5V
15A
5A
43.75W
–65 to 200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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