BCY79
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
GENERAL PURPOSE,
SMALL SIGNAL, PNP TRANSISTOR
5.33 (0.210)
4.32 (0.170)
FEATURES
•
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
12.7 (0.500)
min.
3
1
APPLICATIONS:
Intended for use in audio input stages, driver
stages and low noise input applications. The
2
TO-18 (TO-206AA)
Pin 1 – Emitter
Underside View
PAD 2 – Base
PAD 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CEO
V
BEO
I
C
P
TOT
T
J
, T
STG
R
θ
JC
R
θ
JA
Collector - Emitter Voltage (I
B
=0)
Emitter - Base Voltage (I
C
=0)
Collector Current
Total Power Dissipation @ T
amb
≤
25
°C
@ T
c
≤
45
°C
Maximum Junction And Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
-45V
-5V
-200mA
390mW
1W
-55°C to 175°C
150°C/W
450°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5255
Issue 1
BCY79
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
V
(BR)
CEO*
V
(BR)
EBO
I
CES
I
CEX
I
EBO
V
BE(on) *
V
BE(sat) *
V
CE(sat) *
h
FE
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current (V
BE
=0V)
Collector Cut-off Current (T
C
=100°C)
Emitter Cut-off Current
Base-Emitter On Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain (BCY79A)
Test Conditions
I
B
=0
I
C
=0
V
CE
= -35V
V
CE
= -35V
V
CE
= -45V
I
C
=0
I
C
= -2mA
I
C
=-10mA
I
C
=-100mA
I
C
=-10mA
I
C
=-100mA
I
C
= -2mA
I
C
= -10mA
I
C
= -100mA
T
C
=150°C
V
BE
= -2V
V
EB
= -4V
V
CE
= -5V
I
B
= -0.25mA
I
B
= -2.5mA
I
B
= -0.25mA
I
B
= -2.5mA
V
CE
= -5V
V
CE
= -1V
V
CE
= -1V
V
CE
= -5V
V
CE
= -5V
V
CE
= -1V
V
CE
= -1V
V
CE
= -5V
V
CE
= -5V
V
CE
= -1V
V
CE
= -1V
V
CE
= -5V
V
CE
= -5V
V
CB
= -10V
V
EB
= -0.5V
V
CE
=5V
f=1kHz
I
B1
= -1mA
I
B1
= -10mA
I
C
= -2mA
I
E
= -1
µ
A
Min.
-45
-5
Typ.
Max.
Unit
V
V
-2
0.1
-20
-10
-20
-20
nA
µ
A
µ
A
nA
V
mV
mV
-0.6
-600
-750
-0.65
-700
-900
-120
-400
-0.75
-850
-1200
-250
-800
220
120
80
40
20
180
120
45
40
250
160
60
125
DC Current Gain (BCY79B)
I
C
= -10
µ
A
I
C
= -2mA
I
C
= -10mA
I
C
= -100mA
310
400
DC Current Gain (BCY79C)
I
C
= -10
µ
A
I
C
= -2mA
I
C
= -10mA
I
C
= -100mA
460
630
h
fe
*
Small Signal Current Gain (f=1kHz)
(BCY79A)
(BCY79B)
(BCY79C)
Transition Frequency (f=100MHz)
Collector-Base Capacitance (f=1MHz)
Emitter-Base Capacitance (f=1MHz)
Noise Figure
t
on
t
off
Turn-on Time (V
CC
= -10V)
Turn-off Time (V
CC
= -10V)
250
350
500
180
4.5
11
2
85
55
480
480
7
15
6
150
150
800
800
MHz
pF
dB
-2mA
175
250
f
T
C
CBO
C
EBO
NF
I
C
= -10mA
I
E
=0
I
C
=0
I
C
=200
µ
A
R
S
=2K
Ω
I
C
= -10mA
I
C
= -100mA
ns
ns
IC= -10mA, IB1= IB2= -1mA
IC= -100mA,IB1= IB2= -10mA
*
Pulsed: Pulse Duration = 300µs, duty cycle = 1.5%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5255
Issue 1
Embedded System
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