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BCW65CR

Description
Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size76KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

BCW65CR Overview

Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCW65CR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
GuidelineCECC50002-233
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)400 ns
Maximum opening time (tons)100 ns
Base Number Matches1
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS –
BCW65A – EA
BCW65B – EB
BCW65C – EC
BCW66F – EF
BCW66G – EG
BCW66H – EH
COMPLEMENTARY TYPES –
BCW65 – BCW67
BCW66 – BCW68
BCW65AR –
BCW65BR –
BCW65CR –
BCW66FR –
BCW66GR –
BCW66HR –
4V
5V
6V
7P
5T
7M
BCW65
BCW66
C
B
E
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current(10ms)
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
BCW65
60
32
5
800
1000
100
330
-55 to +150
BCW66
75
45
UNIT
V
V
V
mA
mA
mA
mW
°C
3 - 27

BCW65CR Related Products

BCW65CR BCW65BR BCW65AR
Description Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 32 V 32 V 32 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 180 110 75
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.35 W 0.35 W 0.225 W
Certification status Not Qualified Not Qualified Not Qualified
Guideline CECC50002-233 CECC50002-233 CECC50002-233
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
Maximum off time (toff) 400 ns 400 ns 400 ns
Maximum opening time (tons) 100 ns 100 ns 100 ns
Base Number Matches 1 1 -
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