Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Zetex Semiconductors |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.8 A |
| Collector-emitter maximum voltage | 32 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 75 |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e0 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.225 W |
| Certification status | Not Qualified |
| Guideline | CECC50002-233 |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |
| Maximum off time (toff) | 400 ns |
| Maximum opening time (tons) | 100 ns |

| BCW65AR | BCW65BR | BCW65CR | |
|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.8 A | 0.8 A | 0.8 A |
| Collector-emitter maximum voltage | 32 V | 32 V | 32 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 75 | 110 | 180 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | e0 | e0 | e0 |
| Humidity sensitivity level | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.225 W | 0.35 W | 0.35 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Guideline | CECC50002-233 | CECC50002-233 | CECC50002-233 |
| surface mount | YES | YES | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 100 MHz | 100 MHz | 100 MHz |
| Maximum off time (toff) | 400 ns | 400 ns | 400 ns |
| Maximum opening time (tons) | 100 ns | 100 ns | 100 ns |
| Base Number Matches | - | 1 | 1 |