BSX63R1 datasheet, PDF - EEWORLD Datasheet

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BSX63R1: DescriptionPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size12KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BSX63R1 Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN

BSX63R1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-39, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	63
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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BSX63

Dimensions in mm (inches).

8.51 (0.34)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

Bipolar NPN Device in a

Hermetically sealed TO39

Metal Package.

Bipolar NPN Device.

6.10 (0.240)

6.60 (0.260)

12.70

(0.500)

min.

0.89

max.

(0.035)

0.41 (0.016)

0.53 (0.021)

dia.

CEO

= 60V

5.08 (0.200)

typ.

= 3A

2.54

(0.100)

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

JANTX, JANTXV and JANS specifications

45°

TO39 (TO205AD)

PINOUTS

1 – Emitter

2 – Base

3 – Collector

Parameter

CEO

C(CONT)

Test Conditions

Min.

Typ.

Max.

Units

@ 1/1 (V

/ I

)

30M

160

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

1-Aug-02

BSX63R1 Related Products

	BSX63R1	BSX63
Description	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN
Is it Rohs certified?	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-39, 3 PIN	HERMETIC SEALED, METAL, TO-39, 3 PIN
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	3 A	3 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	63	63
JEDEC-95 code	TO-205AD	TO-205AD
JESD-30 code	O-MBCY-W3	O-MBCY-W3
Number of components	1	1
Number of terminals	3	3
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz

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