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BUW13AW

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size76KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BUW13AW Overview

Transistor

BUW13AW Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)15 A
ConfigurationSingle
Minimum DC current gain (hFE)10
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)175 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
BUW13W; BUW13AW
Silicon diffused power transistors
Product specification
File under Discrete Semiconductors, SC06
1997 Aug 13

BUW13AW Related Products

BUW13AW BUW13W
Description Transistor Transistor
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown
Is Samacsys N N
Maximum collector current (IC) 15 A 15 A
Configuration Single Single
Minimum DC current gain (hFE) 10 10
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 175 W 175 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1
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