BUK552-100B datasheet, PDF - EEWORLD Datasheet

BUK552-100B: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size347KB，5 Pages; ManufacturerNorth American Philips Discrete Products Div

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BUK552-100B Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	North American Philips Discrete Products Div
package instruction	,
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	Single
Maximum drain current (Abs) (ID)	8.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	60 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

	BUK552-100B	BUK552-100A
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified?	incompatible	incompatible
Maker	North American Philips Discrete Products Div	North American Philips Discrete Products Div
Reach Compliance Code	unknown	unknown
Is Samacsys	N	N
Configuration	Single	Single
Maximum drain current (Abs) (ID)	8.5 A	10 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	60 W	60 W
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1

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