BSS70RTA datasheet, PDF - EEWORLD Datasheet

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BSS70RTA: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size33KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BSS70RTA Overview

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

BSS70RTA Parametric

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	4.5 pF
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	300 ns
Maximum opening time (tons)	70 ns
VCEsat-Max	0.4 V
Base Number Matches	1

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BSS70RTA Related Products

	BSS70RTA	BSS70RTC	BSS69RTA	BSS69RTC
Description	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	4.5 pF	4.5 pF	4.5 pF	4.5 pF
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	15	15
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	200 MHz	200 MHz
Maximum off time (toff)	300 ns	300 ns	300 ns	300 ns
Maximum opening time (tons)	70 ns	70 ns	70 ns	70 ns
VCEsat-Max	0.4 V	0.4 V	0.4 V	0.4 V

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