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BSS69RTC

Description
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size33KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

BSS69RTC Overview

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

BSS69RTC Parametric

Parameter NameAttribute value
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-based maximum capacity4.5 pF
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)300 ns
Maximum opening time (tons)70 ns
VCEsat-Max0.4 V

BSS69RTC Related Products

BSS69RTC BSS70RTA BSS70RTC BSS69RTA
Description Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 4.5 pF 4.5 pF 4.5 pF 4.5 pF
Collector-emitter maximum voltage 40 V 40 V 40 V 40 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 30 30 15
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 250 MHz 250 MHz 200 MHz
Maximum off time (toff) 300 ns 300 ns 300 ns 300 ns
Maximum opening time (tons) 70 ns 70 ns 70 ns 70 ns
VCEsat-Max 0.4 V 0.4 V 0.4 V 0.4 V
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