Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 100 GD 60 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
I t - value, Diode
Isolations-Prüfspannung
insulation test voltage
t
P
= 1ms
T
c
= 65°C
T
c
= 25°C
t
P
= 1ms, T
c
= 65°C
V
CES
I
C,nom.
I
C
I
CRM
600
100
130
200
V
A
A
A
T
c
= 25°C, Transistor
P
tot
430
W
V
GES
+/- 20V
V
I
F
100
A
I
FRM
200
A
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
2
t
3.200
As
2
RMS, f= 50Hz, t= 1min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 100A, V
GE
= 15V, T
vj
= 25°C
I
C
= 100A, V
GE
= 15V, T
vj
= 125°C
I
C
= 1,5mA, V
CE
= V
GE
, T
vj
= 25°C
V
CE sat
min.
-
-
V
GE(th)
4,5
typ.
1,95
2,20
5,5
max.
2,45
-
6,5
V
V
V
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
C
ies
-
4,3
-
nF
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
V
CE
= 600V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 600V, V
GE
= 0V, T
vj
= 125°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
C
res
-
-
-
0,4
1
1
-
-
500
-
400
nF
µA
mA
nA
I
CES
I
GES
-
prepared by: Andreas Vetter
approved by: Michael Hornkamp
date of publication: 2000-04-26
revision: 1
1 (8)
BSM 100 GD 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 100 GD 60 DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
I
C
= 100A, V
CC
= 300V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
V
GE
= ±15V, R
G
= 2,2Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 2,2Ω, T
vj
= 125°C
I
C
= 100A, V
CC
= 300V
Anstiegszeit (induktive Last)
rise time (inductive load)
V
GE
= ±15V, R
G
= 2,2Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 2,2Ω, T
vj
= 125°C
I
C
= 100A, V
CC
= 300V
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
V
GE
= ±15V, R
G
= 2,2Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 2,2Ω, T
vj
= 125°C
I
C
= 100A, V
CC
= 300V
Fallzeit (induktive Last)
fall time (inductive load)
V
GE
= ±15V, R
G
= 2,2Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 2,2Ω, T
vj
= 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
T
c
= 25°C
I
C
= 100A, V
CC
= 300V, V
GE
= 15V
R
G
= 2,2Ω, T
vj
= 125°C, L
σ
= 15nH
I
C
= 100A, V
CC
= 300V, V
GE
= 15V
R
G
= 2,2Ω, T
vj
= 125°C, L
σ
= 15nH
t
P
≤
10µsec, V
GE
≤
15V
T
vj
≤125°C,
V
CC
=360V, V
CEmax
= V
CES
-L
σCE
·di/dt
E
on
t
f
-
-
-
20
30
1,0
-
-
-
ns
ns
mJ
t
d,off
-
-
130
150
-
-
ns
ns
t
r
-
-
10
11
-
-
ns
ns
t
d,on
-
-
25
25
-
-
ns
ns
min.
typ.
max.
E
off
-
2,9
-
mJ
I
SC
-
450
-
A
L
σCE
-
28
-
nH
R
CC'+EE'
-
1,8
-
mΩ
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
I
F
= 100A, V
GE
= 0V, T
vj
= 25°C
I
F
= 100A, V
GE
= 0V, T
vj
= 125°C
I
F
= 100A, -di
F
/dt= 4400A/µsec
Rückstromspitze
peak reverse recovery current
V
R
= 300V, V
GE
= -10V, T
vj
= 25°C
V
R
= 300V, V
GE
= -10V, T
vj
= 125°C
I
F
= 100A, -di
F
/dt= 4400A/µsec
Sperrverzögerungsladung
recoverred charge
V
R
= 300V, V
GE
= -10V, T
vj
= 25°C
V
R
= 300V, V
GE
= -10V, T
vj
= 125°C
I
F
= 100A, -di
F
/dt= 4400A/µsec
Abschaltenergie pro Puls
reverse recovery energy
V
R
= 300V, V
GE
= -10V, T
vj
= 25°C
V
R
= 300V, V
GE
= -10V, T
vj
= 125°C
E
rec
-
-
-
3,2
-
-
mJ
mJ
Q
r
-
-
7,7
13
-
-
µC
µC
I
RM
-
-
150
180
-
-
A
A
V
F
min.
-
-
typ.
1,25
1,20
max.
1,6
-
V
V
2 (8)
BSM 100 GD 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 100 GD 60 DLC
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Transistor / transistor, DC
Diode / diode, DC
pro Modul / per module
λ
Paste
= 1W/m*K /
λ
grease
= 1W/m*K
R
thJC
-
-
R
thCK
-
typ.
-
-
0,01
max.
0,29
0,55
K/W
K/W
K/W
T
vj
-
-
150
°C
T
op
-40
-
125
°C
T
stg
-40
-
125
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment für mech. Befestigung
mounting torque
Gewicht
weight
Schraube M5
screw M5
M
-15
G
310
Al
2
O
3
225
4
+15
Nm
%
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics.
It is valid in combination with the belonging technical notes.
3 (8)
BSM 100 GD 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 100 GD 60 DLC
Ausgangskennlinie (typisch)
Output characteristic (typical)
I
C
= f (V
CE
)
V
GE
= 15V
200
180
160
140
Tvj = 25°C
Tvj = 125°C
I
C
[A]
120
100
80
60
40
20
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE
[V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
200
180
VGE = 8V
I
C
= f (V
CE
)
T
vj
= 125°C
160
140
120
100
80
60
40
20
0
0,0
0,5
1,0
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
4 (8)
BSM 100 GD 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 100 GD 60 DLC
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
I
C
= f (V
GE
)
V
CE
= 20V
200
180
Tvj = 25°C
160
140
Tvj = 125°C
I
C
[A]
120
100
80
60
40
20
0
5
6
7
8
9
10
11
12
13
V
GE
[V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
200
180
160
140
Tvj = 25°C
Tvj = 125°C
I
F
= f (V
F
)
I
F
[A]
120
100
80
60
40
20
0
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
V
F
[V]
5 (8)
BSM 100 GD 60 DLC
2000-02-08
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