BDV65AF datasheet, PDF - EEWORLD Datasheet

BDV65AF: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size336KB，9 Pages; ManufacturerNorth American Philips Discrete Products Div

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BDV65AF Overview

Transistor,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	North American Philips Discrete Products Div
package instruction	,
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	12 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	50 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	0.07 MHz
Base Number Matches	1

	BDV65AF	BDV65CF	BDV65BF
Description	Transistor,	Transistor,	Transistor,
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	North American Philips Discrete Products Div	North American Philips Discrete Products Div	North American Philips Discrete Products Div
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	12 A	12 A	12 A
Configuration	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	1000	1000	1000
JESD-609 code	e0	e0	e0
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	50 W	50 W	50 W
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	0.07 MHz	0.07 MHz	0.07 MHz

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