MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW60ALT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
BCW60ALT1
BCW60BLT1
BCW60DLT1
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
32
32
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 1.0
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4 0.3
V(BR)CEO
V(BR)EBO
ICES
—
—
IEBO
—
20
20
20
nAdc
µAdc
nAdc
32
5.0
—
—
Vdc
Vdc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
BCW60ALT1 BCW60BLT1 BCW60DLT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10
µAdc,
VCE = 5.0 Vdc)
hFE
BCW60A
BCW60B
BCW60D
BCW60A
BCW60B
BCW60D
BCW60A
BCW60B
BCW60D
hfe
BCW60A
BCW60B
BCW60D
VCE(sat)
—
—
VBE(sat)
0.7
0.6
VBE(on)
0.6
0.75
1.05
0.85
Vdc
0.55
0.35
Vdc
125
175
350
250
350
700
Vdc
20
30
100
120
175
380
60
70
100
—
—
—
220
310
630
—
—
—
—
—
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
AC Current Gain
(VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz)
Collector – Emitter Saturation Voltage
(IC = 50 mAdc, IB = 1.25 mAdc)
(IC = 10 mAdc, IB = 0.25 mAdc)
Base – Emitter Saturation Voltage
(IC = 50 mAdc, IB = 1.25 mAdc)
(IC = 50 mAdc, IB = 0.25 mAdc)
Base – Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
fT
125
Cobo
—
NF
—
6.0
4.5
dB
—
pF
MHz
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
Turn–Off Time
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990
Ω)
ton
—
toff
—
800
150
ns
ns
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V
300 ns
DUTY CYCLE = 2%
– 0.5 V
<1.0 ns
+10.9 V
10 k
0
CS < 4.0 pF*
– 9.1 V
< 1.0 ns
1N916
CS < 4.0 pF*
275
+ 3.0 V
t1
+10.9 V
10 k
275
10 < t1 < 500
µs
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BCW60ALT1 BCW60BLT1 BCW60DLT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20
IC = 1.0 mA
en, NOISE VOLTAGE (nV)
300
µA
BANDWIDTH = 1.0 Hz
RS = 0
In, NOISE CURRENT (pA)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
2.0
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
30
µA
10
µA
IC = 1.0 mA
300
µA
100
µA
BANDWIDTH = 1.0 Hz
RS
≈ ∞
10
7.0
5.0
10
µA
3.0
100
µA
30
µA
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500 k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
500 700
1k
BANDWIDTH = 1.0 Hz
1M
500 k
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
2.0 dB
3.0 dB 4.0 dB
6.0 dB
10 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
500 700
1k
Figure 5. Narrow Band, 100 Hz
Figure 6. Narrow Band, 1.0 kHz
500 k
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
10
20
30
50 70 100
10 Hz to 15.7 kHz
Noise Figure is defined as:
NF
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
200 300
500 700
1k
+
20 log10
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
IC, COLLECTOR CURRENT (µA)
Figure 7. Wideband
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BCW60ALT1 BCW60BLT1 BCW60DLT1
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125°C
h FE, DC CURRENT GAIN
200
25°C
– 55°C
100
80
60
40
0.004 0.006 0.01
VCE = 1.0 V
VCE = 10 V
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
Figure 8. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
0.8
IC = 1.0 mA
10 mA
50 mA
100 mA
100
TA = 25°C
PULSE WIDTH = 300
µs
80 DUTY CYCLE
≤
2.0%
IB = 500
µA
400
µA
300
µA
0.6
60
200
µA
40
100
µA
20
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
0
5.0 10
20
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
Figure 9. Collector Saturation Region
Figure 10. Collector Characteristics
TJ = 25°C
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1
0.2
2.0
5.0
10
20
0.5 1.0
IC, COLLECTOR CURRENT (mA)
50
100
VBE(sat) @ IC/IB = 10
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
0.8
*APPLIES for IC/IB
≤
hFE/2
25°C to 125°C
0
*
q
VC for VCE(sat)
– 55°C to 25°C
– 0.8
25°C to 125°C
– 1.6
q
VB for VBE
– 2.4
0.1
0.2
– 55°C to 25°C
50
100
0.5
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BCW60ALT1 BCW60BLT1 BCW60DLT1
TYPICAL DYNAMIC CHARACTERISTICS
300
200
100
70
50
30
20
10
7.0
5.0
3.0
1.0
2.0
td @ VBE(off) = 0.5 Vdc
tr
1000
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
700
500
300
200
t, TIME (ns)
100
70
50
30
20
10
1.0
tf
ts
t, TIME (ns)
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
2.0
3.0
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50
70 100
20 30
5.0 7.0 10
3.0
IC, COLLECTOR CURRENT (mA)
50 70
100
Figure 13. Turn–On Time
f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)
Figure 14. Turn–Off Time
500
TJ = 25°C
f = 100 MHz
300
200
5.0 V
C, CAPACITANCE (pF)
VCE = 20 V
10
7.0
5.0
Cib
Cob
3.0
2.0
TJ = 25°C
f = 1.0 MHz
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Current–Gain — Bandwidth Product
Figure 16. Capacitance
20
hoe, OUTPUT ADMITTANCE (
m
mhos)
hie , INPUT IMPEDANCE (k
Ω
)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
100
hfe
≈
200 @ IC = 1.0 mA
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
100
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
hfe
≈
200 @ IC = 1.0 mA
Figure 17. Input Impedance
Figure 18. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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